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PZM9.1NB2T/R PDF预览

PZM9.1NB2T/R

更新时间: 2024-02-03 11:10:12
品牌 Logo 应用领域
恩智浦 - NXP 稳压二极管
页数 文件大小 规格书
12页 79K
描述
DIODE 9.1 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236, PLASTIC, SC-59, 3 PIN, Voltage Regulator Diode

PZM9.1NB2T/R 技术参数

是否Rohs认证:符合生命周期:Transferred
零件包装代码:SOT-23包装说明:R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.21Is Samacsys:N
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJEDEC-95代码:TO-236
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
最大功率耗散:0.3 W认证状态:Not Qualified
标称参考电压:9.1 V最大反向电流:0.5 µA
表面贴装:YES技术:ZENER
端子面层:TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
电压温度Coeff-Max:5.5 mV/ °C最大电压容差:2.1%
工作测试电流:5 mABase Number Matches:1

PZM9.1NB2T/R 数据手册

 浏览型号PZM9.1NB2T/R的Datasheet PDF文件第4页浏览型号PZM9.1NB2T/R的Datasheet PDF文件第5页浏览型号PZM9.1NB2T/R的Datasheet PDF文件第6页浏览型号PZM9.1NB2T/R的Datasheet PDF文件第8页浏览型号PZM9.1NB2T/R的Datasheet PDF文件第9页浏览型号PZM9.1NB2T/R的Datasheet PDF文件第10页 
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
PZM-N series  
GRAPHICAL DATA  
MBG781  
MBG783  
300  
0
handbook, halfpage  
handbook, halfpage  
I
S
Z
(mV/K)  
F
4V3  
(mA)  
200  
1  
3V9  
3V6  
100  
2  
3V3  
3V0  
2V4  
2V7  
0
0.6  
3  
0.8  
1.0  
0
20  
40  
60  
I
(mA)  
V
(V)  
Z
F
PZM2.4N to PZM4.3N.  
Tj = 25 °C to 150 °C.  
Tj = 25 °C.  
Fig.2 Forward current as a function of  
forward voltage; typical values.  
Fig.3 Temperature coefficient as a function of  
working current; typical values.  
MBG782  
MBK204  
10  
handbook, halfpage  
400  
handbook, halfpage  
12  
11  
S
Z
P
tot  
(mW)  
(mV/K)  
10  
300  
9V1  
5
8V2  
7V5  
6V8  
6V2  
5V6  
5V1  
200  
100  
0
0
4V7  
5  
0
4
8
12  
16  
20  
0
50  
100  
150  
200  
I
(mA)  
Z
T (°C)  
j
PZM4.7N to PZM12N.  
Tj = 25 °C to 150 °C.  
Fig.4 Temperature coefficient as a function of  
working current; typical values.  
Fig.5 Power derating curve.  
1999 Jan 28  
7

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