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PZ2N7002M PDF预览

PZ2N7002M

更新时间: 2024-10-03 17:15:51
品牌 Logo 应用领域
尼克森微 - NIKOSEM /
页数 文件大小 规格书
4页 171K
描述
SOT-23(S)

PZ2N7002M 数据手册

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PZ2N7002M  
SOT-23(S)  
Halogen-Free & Lead-Free  
N-Channel Logic Level Enhancement  
Mode Field Effect Transistor  
NIKO-SEM  
Drain  
PRODUCT SUMMARY  
Gate  
V(BR)DSS  
60V  
RDS(ON)  
ID  
G. GATE  
D. DRAIN  
S. SOURCE  
300mA  
2Ω  
ESD PROTECTION DIODE  
Source  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
Drain-Source Voltage  
SYMBOL  
VDS  
LIMITS  
60  
UNITS  
V
V
Gate-Source Voltage  
Continuous Drain Current  
Pulsed Drain Current1  
Power Dissipation  
VGS  
±25  
TC = 25 ° C  
300  
ID  
IDM  
mA  
A
TC = 100 ° C  
190  
1
TC = 25 ° C  
0.35  
0.14  
-40 to 150  
PD  
W
TC = 100 ° C  
Operating Junction & Storage Temperature Range  
Tj, Tstg  
° C  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
Junction-to-Ambient  
1Pulse width limited by maximum junction temperature.  
SYMBOL  
TYPICAL  
MAXIMUM  
350  
UNITS  
° C / W  
RJA  
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)  
LIMITS  
MIN TYP MAX  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
UNIT  
STATIC  
GS = 0V, ID = 100A  
DS = VGS, ID = 100A  
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
Gate-Body Leakage  
V(BR)DSS  
VGS(th)  
IGSS  
60  
V
V
1.0  
1.8  
2.5  
±30  
1
V
VDS = 0V, VGS = ±16V  
VDS = 48V, VGS = 0V  
A  
Zero Gate Voltage Drain Current  
On-State Drain Current1  
IDSS  
ID(ON)  
A  
VDS = 40V, VGS = 0V, TJ = 125 ° C  
VDS = 10V, VGS = 10V  
10  
1
A
VGS = 3.5V, ID = 10mA  
VGS = 4.5V, ID = 100mA  
VGS = 10V, ID = 200mA  
VDS = 20V, ID = 200mA  
2.1  
1.7  
5
3
2
Drain-Source On-State Resistance1  
RDS(ON)  
Ω
S
1.6  
Forward Transconductance1  
gfs  
0.18  
E-31-3  
REV 1.0  
1

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