PZ2N7002M
SOT-23(S)
Halogen-Free & Lead-Free
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
NIKO-SEM
Drain
PRODUCT SUMMARY
Gate
V(BR)DSS
60V
RDS(ON)
ID
G. GATE
D. DRAIN
S. SOURCE
300mA
2Ω
ESD PROTECTION DIODE
Source
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
SYMBOL
VDS
LIMITS
60
UNITS
V
V
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Power Dissipation
VGS
±25
TC = 25 ° C
300
ID
IDM
mA
A
TC = 100 ° C
190
1
TC = 25 ° C
0.35
0.14
-40 to 150
PD
W
TC = 100 ° C
Operating Junction & Storage Temperature Range
Tj, Tstg
° C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
TYPICAL
MAXIMUM
350
UNITS
° C / W
RJA
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
LIMITS
MIN TYP MAX
PARAMETER
SYMBOL
TEST CONDITIONS
UNIT
STATIC
GS = 0V, ID = 100A
DS = VGS, ID = 100A
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
60
V
V
1.0
1.8
2.5
±30
1
V
VDS = 0V, VGS = ±16V
VDS = 48V, VGS = 0V
A
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
A
VDS = 40V, VGS = 0V, TJ = 125 ° C
VDS = 10V, VGS = 10V
10
1
A
VGS = 3.5V, ID = 10mA
VGS = 4.5V, ID = 100mA
VGS = 10V, ID = 200mA
VDS = 20V, ID = 200mA
2.1
1.7
5
3
2
Drain-Source On-State Resistance1
RDS(ON)
Ω
S
1.6
Forward Transconductance1
gfs
0.18
E-31-3
REV 1.0
1