Datasheet > PT8205

PT8205

更新时间： 2024-02-16 23:58:16

品牌	Logo	应用领域
金誉半导体 - HTSEMI		/
页数	文件大小	规格书
3页	2433K
描述
20 V Dual N-Channel Enhancement Mode MOSFET

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PT8205 数据手册

PT8205

20V Dual N-Channel Enhancement Mode MOSFET

VDS= 20V

RDS(ON), Vgs@2.5V, Ids@3.4A 46mΩ

RDS(ON), Vgs@4.V, Ids@4.3A

Ω

30m

Features

Advanced trench process technology

High Density Cell Design For Ultra Low On-Resistance

High Power and Current handing capability

Ideal for Li ion battery pack applications

Package Dimensions

SOT-163

Millimeter

Min.

Millimeter

REF.

Max.

Min.

0.45 REF.

0.60 REF.

Max.

1.10 MAX.

0.10

1.00

0.70

0.12 REF.

2.70

0°

0.30

10°

0.50

3.10

0.95 REF.

2.60

1.40

3.00

1.80

1.90 REF.

Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)

Parameter

Symbol

V_DS

V_GS

I_D

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current ¹⁾

± 12

I_DM

1.4

TA = 25^oC

TA = 75^oC

Maximum Power Dissipation

P_D

Operating Junction and Storage Temperature Range

T_J, T_stg

-55 to 150

100

^oC

^oC/W

Junction-to-Ambient Thermal Resistance (PCB mounted) ²⁾

R_θ

Notes

Pulse width limited by maximum junction temperature.

Surface Mounted on FR4 Board, t v 5 sec.

JinYu

semiconductor

www.htsemi.com

Date:2011/05

12 3

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