MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
PS12012-A
FLAT-BASE TYPE
INSULATED TYPE
TOTAL SYSTEM
Symbol
Condition
—
Ratings
Unit
°C
Item
Tj
Junction temperature
(Note 2)
(Fig. 3)
–20 ~ +125
–40 ~ +125
–20 ~ +100
Tstg
TC
Storage temperature
°C
Module case operating temperature
°C
60 Hz sinusoidal AC for 1 minute, between all terminals
and base plate.
VISO
Isolation voltage
Mounting torque
2500
Vrms
N·m
—
Mounting screw: M3.5
0.78 ~ 1.27
Note 2) : The item defines the maximum junction temperature for the power elements (IGBT/Diode) of the ASIPM to ensure safe operation.
However, these power elements can endure instantaneous junction temperature as high as 150°C. To make use of this additional
temperature allowance, a detailed study of the exact application conditions is required and, accordingly, necessary information is
to be provided before use.
CASE TEMPERATURE MEASUREMENT POINT (3mm from the base surface)
T
C
(Fig. 3)
THERMAL RESISTANCE
Ratings
Typ.
—
Symbol
Item
Condition
Unit
Min.
—
Max.
3.0
Rth(jc)Q
Rth(jc)F
Rth(jc)QB
Rth(jc)FB
Rth(c-f)
Inverter IGBT (1/6)
Inverter FWDi (1/6)
Brake IGBT
°C/W
°C/W
°C/W
°C/W
°C/W
—
—
7.3
Junction to case Thermal
Resistance
—
—
3.0
—
—
7.3
Brake FWDi
Contact Thermal Resistance
—
—
0.040
Case to fin, thermal grease applied (1 Module)
ELECTRICAL CHARACTERISTICS (Tj = 25°C, VDH = 15V , VDB = 15V, VDL = 5V unless otherwise noted)
Ratings
Typ.
Symbol
Item
Condition
Unit
Min.
—
Max.
3.6
Collector-emitter saturation
voltage
VDL = 5V, VDH = VDB = 15V Input = ON,
VCE(sat)
VEC
—
—
—
V
V
V
Tj = 25°C, Ic = 5A
FWDi forward voltage
Tj = 25°C, Ic = –5A, Input = OFF
—
3.5
Brake IGBT
—
3.6
VDL = 5V, VDH = 15V Input = ON, Tj = 25°C, Ic = 5A
VCE(sat)Br
Collector-emitter saturation voltage
VFBr
ton
Brake diode forward voltage
Tj = 25°C, IF = 5A, Input = OFF
1/2 Bridge inductive, Input = ON
VCC = 600V, Ic = 5A, Tj = 125°C
VDL = 5V, VDH = 15V, VDB = 15V
—
0.3
—
—
—
—
—
3.5
2.0
1.4
4.0
1.6
—
V
1.2
0.5
2.2
0.9
0.2
µs
µs
µs
µs
µs
tc(on)
toff
Switching times
tc(off)
trr
Note : ton, toff include delay time of the internal control
circuit.
FWD reverse recovery time
VCC ≤ 800V, Input = ON (One-Shot)
Tj = 125°C start
Short circuit endurance
(Output, Arm, and Load,
Short Circuit Modes)
• No destruction
• FO output by protection operation
13.5V ≤ VDH = VDB = ≤ 16.5V
VCC ≤ 800V, Tj ≤ 125°C,
• No destruction
Switching SOA
• No protecting operation
• No FO output
Ic < IOL(CL) operation level, Input = ON,
13.5V ≤ VDH = VDB = ≤ 16.5V
VDL = 5V, VDH = 15V, VCIN = 5V
VDL = 5V, VDH = 15V, VCIN = 5V
IDH
—
—
VDH Circuit Current
150
50
mA
mA
V
IDL
—
—
VDL Circuit Current
Vth(on)
Vth(off)
Ri
0.8
2.5
—
1.4
3.0
150
Input on threshold voltage
Input off threshold voltage
Input pull-up resistor
2.0
4.0
—
V
Integrated between input terminal-VDH
kΩ
Jan. 2000