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PS12012-A PDF预览

PS12012-A

更新时间: 2024-02-11 10:19:07
品牌 Logo 应用领域
三菱 - MITSUBISHI 运动控制电子器件信号电路电动机控制电机
页数 文件大小 规格书
6页 396K
描述
Acoustic noise-less 0.2kW/AC400V Class 3 Phase inverter and other motor control applications

PS12012-A 技术参数

生命周期:Obsolete包装说明:, MODULE,36LEAD,3.2
Reach Compliance Code:unknown风险等级:5.81
Is Samacsys:N端子数量:36
封装主体材料:PLASTIC/EPOXY封装等效代码:MODULE,36LEAD,3.2
封装形式:MICROELECTRONIC ASSEMBLY电源:5,15,600 V
认证状态:Not Qualified子类别:Motion Control Electronics
技术:HYBRIDBase Number Matches:1

PS12012-A 数据手册

 浏览型号PS12012-A的Datasheet PDF文件第1页浏览型号PS12012-A的Datasheet PDF文件第2页浏览型号PS12012-A的Datasheet PDF文件第4页浏览型号PS12012-A的Datasheet PDF文件第5页浏览型号PS12012-A的Datasheet PDF文件第6页 
MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>  
PS12012-A  
FLAT-BASE TYPE  
INSULATED TYPE  
TOTAL SYSTEM  
Symbol  
Condition  
Ratings  
Unit  
°C  
Item  
Tj  
Junction temperature  
(Note 2)  
(Fig. 3)  
–20 ~ +125  
–40 ~ +125  
–20 ~ +100  
Tstg  
TC  
Storage temperature  
°C  
Module case operating temperature  
°C  
60 Hz sinusoidal AC for 1 minute, between all terminals  
and base plate.  
VISO  
Isolation voltage  
Mounting torque  
2500  
Vrms  
N·m  
Mounting screw: M3.5  
0.78 ~ 1.27  
Note 2) : The item defines the maximum junction temperature for the power elements (IGBT/Diode) of the ASIPM to ensure safe operation.  
However, these power elements can endure instantaneous junction temperature as high as 150°C. To make use of this additional  
temperature allowance, a detailed study of the exact application conditions is required and, accordingly, necessary information is  
to be provided before use.  
CASE TEMPERATURE MEASUREMENT POINT (3mm from the base surface)  
T
C
(Fig. 3)  
THERMAL RESISTANCE  
Ratings  
Typ.  
Symbol  
Item  
Condition  
Unit  
Min.  
Max.  
3.0  
Rth(jc)Q  
Rth(jc)F  
Rth(jc)QB  
Rth(jc)FB  
Rth(c-f)  
Inverter IGBT (1/6)  
Inverter FWDi (1/6)  
Brake IGBT  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
7.3  
Junction to case Thermal  
Resistance  
3.0  
7.3  
Brake FWDi  
Contact Thermal Resistance  
0.040  
Case to fin, thermal grease applied (1 Module)  
ELECTRICAL CHARACTERISTICS (Tj = 25°C, VDH = 15V , VDB = 15V, VDL = 5V unless otherwise noted)  
Ratings  
Typ.  
Symbol  
Item  
Condition  
Unit  
Min.  
Max.  
3.6  
Collector-emitter saturation  
voltage  
VDL = 5V, VDH = VDB = 15V Input = ON,  
VCE(sat)  
VEC  
V
V
V
Tj = 25°C, Ic = 5A  
FWDi forward voltage  
Tj = 25°C, Ic = –5A, Input = OFF  
3.5  
Brake IGBT  
3.6  
VDL = 5V, VDH = 15V Input = ON, Tj = 25°C, Ic = 5A  
VCE(sat)Br  
Collector-emitter saturation voltage  
VFBr  
ton  
Brake diode forward voltage  
Tj = 25°C, IF = 5A, Input = OFF  
1/2 Bridge inductive, Input = ON  
VCC = 600V, Ic = 5A, Tj = 125°C  
VDL = 5V, VDH = 15V, VDB = 15V  
0.3  
3.5  
2.0  
1.4  
4.0  
1.6  
V
1.2  
0.5  
2.2  
0.9  
0.2  
µs  
µs  
µs  
µs  
µs  
tc(on)  
toff  
Switching times  
tc(off)  
trr  
Note : ton, toff include delay time of the internal control  
circuit.  
FWD reverse recovery time  
VCC 800V, Input = ON (One-Shot)  
Tj = 125°C start  
Short circuit endurance  
(Output, Arm, and Load,  
Short Circuit Modes)  
• No destruction  
• FO output by protection operation  
13.5V VDH = VDB = 16.5V  
VCC 800V, Tj 125°C,  
• No destruction  
Switching SOA  
• No protecting operation  
• No FO output  
Ic < IOL(CL) operation level, Input = ON,  
13.5V VDH = VDB = 16.5V  
VDL = 5V, VDH = 15V, VCIN = 5V  
VDL = 5V, VDH = 15V, VCIN = 5V  
IDH  
VDH Circuit Current  
150  
50  
mA  
mA  
V
IDL  
VDL Circuit Current  
Vth(on)  
Vth(off)  
Ri  
0.8  
2.5  
1.4  
3.0  
150  
Input on threshold voltage  
Input off threshold voltage  
Input pull-up resistor  
2.0  
4.0  
V
Integrated between input terminal-VDH  
kΩ  
Jan. 2000  

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