POLYFET RF DEVICES 更新时间:2023-11-27 07:12:14
Polyfet RF Devices是宽频带 RF 电源晶体管和电源模块的制造商。我们是一家自1988年以来一直经营的私营公司。我们的设备包括使用最先进的设备处理的氮化镓、LDMOS 和 VDMOS 技术。它们的最大运行条件可达 50Vdc、3GHz 和 600W。我们的产品用于军事通信、电视广播和 NMR 等应用。我们聘请了技术人员,协助客户从设备选择到放大器设计的支持。我们对长期生产支持的承诺增强了军事承包商使用过时产品的吸引力。
型号 | 品牌 | 价格 | 文档 | 应用 | 描述 | |
F1014 | POLYFET | 获取价格 | 晶体晶体管功率场效应晶体管栅 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | ||
F1012 | POLYFET | 获取价格 | 晶体晶体管功率场效应晶体管栅 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | ||
L125 | POLYFET | 获取价格 | 晶体晶体管栅 | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR | ||
L225 | POLYFET | 获取价格 | 晶体晶体管栅 | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR | ||
L2721 | POLYFET | 获取价格 | 晶体晶体管栅 | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR | ||
L2711 | POLYFET | 获取价格 | 晶体射频场效应晶体管栅 | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR | ||
L2821 | POLYFET | 获取价格 | 晶体晶体管栅 | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR | ||
L2801 | POLYFET | 获取价格 | 晶体晶体管栅 | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR | ||
L8721P | POLYFET | 获取价格 | 晶体晶体管栅 | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR | ||
L8711P | POLYFET | 获取价格 | 晶体晶体管栅 | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR | ||
L8701P | POLYFET | 获取价格 | 晶体晶体管栅 | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR | ||
L8821P | POLYFET | 获取价格 | 晶体晶体管功率场效应晶体管栅 | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR | ||
L8801P | POLYFET | 获取价格 | 晶体晶体管栅 | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR | ||
L88016 | POLYFET | 获取价格 | 晶体晶体管栅 | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR | ||
LB401 | POLYFET | 获取价格 | 晶体射频场效应晶体管栅放大器局域网 | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR | ||
LC401 | POLYFET | 获取价格 | 晶体晶体管栅 | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR | ||
LC821 | POLYFET | 获取价格 | 晶体晶体管栅 | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR | ||
LC801 | POLYFET | 获取价格 | 晶体晶体管栅 | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR | ||
F5001 | POLYFET | 获取价格 | 晶体晶体管栅 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | ||
F3002 | POLYFET | 获取价格 | 晶体晶体管功率场效应晶体管栅 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | ||
F2248 | POLYFET | 获取价格 | 晶体晶体管栅 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | ||
F2247 | POLYFET | 获取价格 | 晶体晶体管功率场效应晶体管栅 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | ||
F2246 | POLYFET | 获取价格 | 晶体晶体管功率场效应晶体管栅 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | ||
F2213 | POLYFET | 获取价格 | 晶体晶体管栅 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | ||
F2212 | POLYFET | 获取价格 | 晶体晶体管功率场效应晶体管栅 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | ||
F2211 | POLYFET | 获取价格 | 晶体晶体管功率场效应晶体管栅 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | ||
F2202 | POLYFET | 获取价格 | 晶体晶体管栅 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | ||
F2201 | POLYFET | 获取价格 | 晶体晶体管栅 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | ||
F2049 | POLYFET | 获取价格 | 晶体晶体管栅 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | ||
F2048 | POLYFET | 获取价格 | 晶体晶体管栅 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
POLYFET RF DEVICES 热门型号