LB401

更新时间： 2024-02-23 03:47:38

品牌	Logo	应用领域
POLYFET		晶体射频场效应晶体管栅放大器局域网
页数	文件大小	规格书
2页	40K
描述
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

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技术参数
数据手册

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LB401 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	FLANGE MOUNT, R-CDFM-F4	Reach Compliance Code：	unknown
风险等级：	5.75	其他特性：	LOW NOISE
外壳连接：	SOURCE	配置：	SINGLE
最小漏源击穿电压：	65 V	最大漏极电流 (ID)：	13.5 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最高频带：	ULTRA HIGH FREQUENCY BAND
JESD-30 代码：	R-CDFM-F4	元件数量：	1
端子数量：	4	工作模式：	ENHANCEMENT MODE
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	N-CHANNEL
表面贴装：	YES	端子形式：	FLAT
端子位置：	DUAL	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	Base Number Matches：	1

LB401 数据手册

polyfet rf devices

LB401

General Description

Silicon VDMOS and LDMOS

transistors designed specifically

for broadband RF applications.

Suitable for Militry Radios,

SILICON GATE ENHANCEMENT MODE

RF POWER LDMOS TRANSISTOR

Cellular and Paging Amplifier Base

Stations, Broadcast FM/AM, MRI,

Laser Driver and others.

130.0 Watts Push - Pull

Package Style LB

"Polyfet" process features

low feedback and output capacitances

HIGH EFFICIENCY, LINEAR

HIGH GAIN, LOW NOISE

resulting in high F transistors with high

input impedance and high efficiency.

25 C )

ABSOLUTE MAXIMUM RATINGS ( T =

Total

Device

Dissipation

Junction to

Case Thermal

Resistance

Maximum

Junction

Temperature

DC Drain

Current

Drain to

Gate

Voltage

Drain to

Source

Voltage

Gate to

Source

Voltage

Storage

Temperature

200

13.5

230 Watts

0.75 C/W

-65 C to 150 C

70V

20 V

RF CHARACTERISTICS (

130.0 WATTS OUTPUT )

SYMBOL PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Idq = 0.40 A, Vds = 28.0 V, F = 500

Gps

Common Source Power Gain

MHz

Idq =

0.40

Drain Efficiency

A, Vds = 28.0 V, F = 500 MHz

Idq = 0.40

A, Vds = 28.0 V, F = 500

MHz

VSWR

Load Mismatch Tolerance

20:1

Relative

ELECTRICAL CHARACTERISTICS ( EACH SIDE )

SYMBOL PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Drain Breakdown Voltage

Ids = 0.25 mA, Vgs = 0V

Vds =

Bvdss

Idss

1.0

Zero Bias Drain Current

Gate Leakage Current

28.0 V, Vgs = 0V

Igss

Vgs

Vds = 0V Vgs = 30V

Gate Bias for Drain Current

Ids = 0.30 A, Vgs = Vds

2.7

Forward Transconductance

Saturation Resistance

Mho

Vds = 10V, Vgs = 5V

Rdson

Ohm

Vgs = 20V, Ids = 8.00 A

0.28

17.00

80.0

4.0

Idsat

Ciss

Crss

Coss

Saturation Current

Amp

Vgs = 20V, Vds = 10V

28.0 Vgs = 0V, F = 1 MHz

Common Source Input Capacitance

Common Source Feedback Capacitance

Common Source Output Capacitance

Vds =

28.0 Vgs = 0V, F = 1 MHz

50.0

REVISION 11/14/2001

POLYFET RF DEVICES

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com

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