THYRISTOR MODULE
(
)
PD,PE,KK
PK
25F
UL:E76102（M）
Power Thyristor/Diode Module PK25F series are designed for various rectifier circuits
and power controls. For your circuit application. following internal connections and wide
voltage ratings up to 1,600V are available. High precision 25mm (1inch) width package
and electrically isolated mounting base make your mechanical design easy.
92
20
17.5
20
20
2-
6
●
T(AV)
I
T(RMS)
25A, I
TSM
39A, I
580A
● di/dt 100 A/μs
● dv/dt 500V/μs
2.8
�
M5X10
K2
G2
K2
G2
#110TAB
（Applications）
Various rectifiers
AC/DC motor drives
Heater controls
Light dimmers
3
2
1
K1G1
（A2）�
（K2）�
3
2
1
A1K2
K1
（K2）�
（A2）�
A1K2
PK
PE
80±0.2
K2
2
K2
G2
3
2
1
1
1
K1G1
（A2）�
（K2）�
K1G1
（A2）�
A1K2
（A1）�
Static switches
PD
KK
Unit：
A
■Maximum Ratings
Ratings
PK25F40
PD25F40
PE25F40
KK25F40
PK25F80
PD25F80
PE25F80
KK25F80
PK25F120
PD25F120
PE25F120
PK25F160
PD25F160
PE25F160
KK25F160
Symbol
Item
Unit
KK25F120
VRRM
VRSM
VDRM
400
480
400
800
960
800
1200
1300
1200
1600
1700
1600
V
V
V
＊
＊
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Off-State Voltage
Symbol
T（AV）
I
Item
Conditions
Ratings
25
Unit
A
＊Average On-State Current
＊R.M.S. On-State Current
＊Surge On-State Current
Single phase, half wave, 180°conduction, Tc：96℃
Single phase, half wave, 180°conduction, Tc：96℃
／cycle, 50Hz/60Hz, peak Value, non-repetitive
Value for one cycle of surge current
T（RMS）
I
39
A
1
TSM
I
A
530 580
/
2
2
2
2
I t
1400
10
A S
＊I t
GM
P
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
W
W
A
G（AV）
P
1
FGM
I
3
FGM
V
Peak Gate Voltage (Forward)
Peak Gate Voltage (Reverse)
Critical Rate of Rise of On-State Current
10
V
RGM
V
5
V
1
G
D
DRM
G
100
2500
di／dt
ISO
V
I ＝100mA，Tj＝25℃，V ＝
／
V
，dI dt＝0.1A μs
A μs
/
/
/
2
A.C.1minute
V
℃
℃
＊
＊
Isolation Breakdown Voltage (R.M.S.)
Operating Junction Temperature
Tj
－40 to ＋125
－40 to ＋125
2.7（28）
2.7（28）
170
Tstg
＊Storage Temperature
Mounting（M5） Recommended Value 1.5-2.5（15-25）
Terminal（M5） Recommended Value 1.5-2.5（15-25）
Mounting
Torque
N･ｍ
（㎏f･B）
g
Mass
■Electrical Characteristics
Symbol
DRM
I
Item
Conditions
at V , single phase, half wave, Tj＝125℃
Ratings
10
Unit
mA
mA
V
Repetitive Peak Off-State Current, max.
Repetitive Peak Reverse Current, max.
Peak On-State Voltage, max.
Gate Trigger Current/Voltage, max.
Non-Trigger Gate, Voltage. min.
Turn On Time, max.
DRM
RRM
I
DRM
10
＊
＊
at V , single phase, half wave, Tj＝125℃
TM
V
1.55
On-State Current 75A, Tj＝25℃ Inst. measurement
GT
GT
T
D
I ／V
Tj＝25℃，I ＝1A，V ＝6V
50 3
mA V
/
/
1
GD
V
D
DRM
0.25
10
V
Tj＝125℃，V ＝／V
2
1
tgt
T
G
D
DRM
G
I ＝25A，I ＝100mA，Tj＝25℃，V ＝
／
2V ，dI dt＝0.1A μs
μs
/
/
2
Critical Rate of Rise of Off-State Voltage, min.
Holding Current, typ.
D
DRM
500
50
dv／dt
Tj＝125℃, V ＝／V , Exponential wave.
V μs
/
3
H
I
mA
mA
Tj＝25℃
Tj＝25℃
Junction to case
L
I
Lutching Current, typ.
100
0.78
Rth（j-c）＊Thermal Impedance, max.
℃ W
/
＊mark：Thyristor and Diode part. No mark：Thyristor part
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
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