Datasheet > PJ8205

PJ8205

更新时间： 2025-09-16 19:06:03

品牌	Logo	应用领域
平晶微 - PJSEMI		/
页数	文件大小	规格书
5页	1184K
描述

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中文翻译

获取价格

数据手册

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PJ8205 数据手册

PJ8205

N-Channel Power MOSFET

Features

SOT-23-6

⚫

Advanced trench process technology

High Density Cell Design For Ultra Low On-Resistance

High Power and Current handing capability

Schematic Diagram

Drain1

Drain2

Gate1

Gate2

Source2

Source1

Absolute Maximum Ratings

Ratings at T_C=25℃ unless otherwise specified.

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

I_D

±12

Continuous Drain Current

Pulsed Drain Current ^Note1

I_DM

P_D

1.25

Power Dissipation

°C

Junction and Storage Temperature Range

T_J, T_STG

150, -55 to 150

Thermal Characteristics

Parameter

Symbol

Typ.

Units

Maximum Junction-to-Ambient ^Note2

R_θJA

100

°C/W

1 / 5

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Revision：1.0 May-2019

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