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PGB1020805MR PDF预览

PGB1020805MR

更新时间： 2024-01-30 18:10:36
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网二极管
页数 文件大小 规格书
5页 375K
描述
Trans Voltage Suppressor Diode, Bidirectional, 4 Element, Silicon, ROHS COMPLIANT, GLASS PACKAGE-6

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PGB1020805MR 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete包装说明：X-LDSS-N6
针数：6Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.76其他特性：LOW CAPACITANCE
配置：COMMON ANODE, 4 ELEMENTS二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码：X-LDSS-N6
JESD-609代码：e3湿度敏感等级：1
元件数量：4端子数量：6
封装主体材料：GLASS封装形状：UNSPECIFIED
封装形式：SPECIAL SHAPE峰值回流温度（摄氏度）：260
极性：BIDIRECTIONAL认证状态：Not Qualified
表面贴装：YES技术：AVALANCHE
端子面层：MATTE TIN端子形式：NO LEAD
端子位置：DUAL处于峰值回流温度下的最长时间：30
Base Number Matches：1

PGB1020805MR 数据手册

 浏览型号PGB1020805MR的Datasheet PDF文件第1页浏览型号PGB1020805MR的Datasheet PDF文件第3页浏览型号PGB1020805MR的Datasheet PDF文件第4页浏览型号PGB1020805MR的Datasheet PDF文件第5页 
PulseGuard® Suppressors  
Surface Mount Polymeric ESD Suppressors  
Electrical Characteristics  
Specification  
PGB1010402  
PGB1010603  
PGB102ST23  
PGB1040805  
Notes  
ESD Capability  
–
–
–
–
IEC 61000-4-2 Direct Discharge  
IEC 61000-4-2 Air Discharge  
8kV  
15kV  
8kV  
15kV  
8kV  
15kV  
8kV  
15kV  
Measured per IEC 61000-4-2  
8kV Direct Discharge1  
Peak Voltage (typical)  
1000V  
250V  
500V  
150V  
500V  
150V  
500V  
150V  
Measured per IEC 61000-4-2  
8kV Direct Discharge1  
Clamping Voltage (typical)  
Rated Voltage  
Capacitance  
12VDC max  
0.055pF  
24VDC max  
0.055pF  
24VDC max  
0.055pF  
24VDC max  
0.055pF  
Measured at 1MHZ  
Measured per IEC 61000-4-2  
8kV Direct Discharge1  
Response Time  
Leakage Current  
<1nS  
<1nA  
<1nS  
<1nA  
<1nS  
<1nA  
<1nS  
<1nA  
Measured at 6VDC  
Some shifting in  
characteristics may occur  
when tested over multiple  
pulses at a very rapid rate  
ESD Pulse Withstand  
100 pulses min 1000 pulses min 1000 pulses min 1000 pulses min  
Notes:  
1 Testing performed on Littelfuse Test Set up as described in typical test setup section.  
Design Consideration  
Because of the fast rise-time of the ESD transient, proper placement of PulseGuard suppressors are a key design  
consideration to achieving optimal ESD suppression. The devices should be placed on the circuit board as close to the  
source of the ESD transient as possible. Install PulseGuard suppressors (conected from signal/data line to ground) directly  
behind the connector so that they are the first board-level circuit component encountered by the ESD transient.  
Soldering Parameters  
Reflow Condition  
- Temperature Min (T  
Pb – Free assembly  
)
150°C  
s(min)  
Pre Heat - Temperature Max (T  
)
200°C  
s(max)  
- Time (min to max) (ts)  
60 – 180 secs  
Average ramp up rate (Liquidus Temp  
(TL) to peak  
5°C/second max  
5°C/second max  
TS(max) to TL - Ramp-up Rate  
- Temperature (TL) (Liquidus) 217°C  
Reflow  
- Temperature (tL)  
60 – 150 seconds  
250+0/-5 °C  
Peak Temperature (TP)  
Time within 5°C of actual peak  
Temperature (tp)  
20 – 40 seconds  
Ramp-down Rate  
5°C/second max  
8 minutes Max.  
260°C  
Time 25°C to peak Temperature (TP)  
Do not exceed  
2
PGB1 Series  
www.littelfuse.com  
©2007 Littelfuse  
Electronics Designers Guide  
Specifications are subject to change without notice.  
12345

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