Datasheet > PE848DU

PE848DU

更新时间： 2024-09-28 17:15:19

品牌	Logo	应用领域
尼克森微 - NIKOSEM		光电二极管
页数	文件大小	规格书
9页	954K
描述
PDFN 3x3

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中文翻译

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数据手册

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PE848DU 数据手册

Dual N-Channel Enhancement Mode

Field Effect Transistor

PE848DU

NIKO-SEM

PDFN 3.3x3.3S

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

R_DS(ON)

5.8mΩ

4.2mΩ

I_D

30V

18A

21A

Features

• Pb−Free, Halogen Free and RoHS compliant.

• Low R_DS(on)to Minimize Conduction Losses.

• Ohmic Region Good R_DS(on)Ratio.

• Optimized Gate Charge to Minimize Switching Losses.

• 100% UIS and Rg Tested.

Applications

• Computing DC to DC converters.

• Communications DC to DC converters.

• General Purpose Point of load.

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

±12

3.1

UNITS

Gate-Source Voltage

V_GS

±12

T_C= 25 °C

Continuous Drain Current

Pulsed Drain Current¹

Continuous Drain Current³

I_D

I_DM

I_D

T_C= 100 °C

110

T_A= 25 °C

T_A= 70 °C

Avalanche Current

Avalanche Energy

I_AS

L = 0.03mH

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

E_AS

Power Dissipation

Power Dissipation³

P_D

3.4

2.2

P_D

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

O-2-2

REV1.1

12 3 4 5 6 7...9

中文翻译

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