Datasheet > PDM34078S6TQTY

PDM34078S6TQTY

更新时间： 2023-01-03 00:02:01

品牌	Logo	应用领域
IXYS		静态存储器
页数	文件大小	规格书
14页	318K
描述
SRAM

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数据手册

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PDM34078S6TQTY 数据手册

PDM34078

Recommended DC Operating Conditions

Symbol

Description

Min.

Typ.

Max.

Unit

Supply Voltage

3.0

3.3

3.6

Supply voltage

CCQ

Supply Voltage

Commercial

Ambient Temperature

°C

DC Electrical Characteristics ^(V= 3.3V ± 0.3V, All Temperature Ranges)

Symbol

|I |

Description

Test Conditions

= 0V to V

Min.

Max.

Unit

Input Leakage Current

Output Leakage Current

Output Low Voltage

Output High Voltage

Input HIGH Voltage

–2

µA

Outputs Disabled, V = 0V to V

I/O CC

= Min., I = 8 mA

—

0.4

= Min., I = –5 mA

2.4

2.0

—

Vcc+0.3

(1)

Input LOW Voltage

–0.3

0.8

NOTES: 1. Undershoots to –2.0 for 10 ns are allowed once per cycle.

2. MODE, FT and ZZ pins have an internal pullup and exhibit an input leakage current of ±400 µA.

Power Supply Characteristics

Symbol Description

Test Conditions

-6 ns

-7 ns

-8 ns

-10 ns

-12 ns

Unit

Active Supply Current

Device Deselected

350

300

250

230

210

≤ V or ≥ V

= 0

IH, I/O

Standby Current:

Device Deselected

≤ V or ≥ V 0 MHz

IH,

All inputs static

Device Deselected

SB1

SB2

SB3

≤ 0.2V or ≥ V – 0.2V

All inputs static, 0 MHz

Device Deselected

≤ V or ≥ V

IL IH,

All inputs static

Sleep Mode

Standby Current:

Device Deselected

ZZ ≥ V – 0.2V

CCQ

Rev 1.0 - 5/01/98

1...4 5 678 9 10...14

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