Datasheet > PD25025F

PD25025F

更新时间： 2025-08-24 03:42:55

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描述
25 W, 2.3GHz - 2.5GHz , N-Channel E-Mode, Lateral MOSFET

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PD25025F 数据手册

PD25025F

25 W, 2.3GHz - 2.5GHz , N-Channel E-Mode, Lateral MOSFET

Table 1. Thermal Characteristics

Introduction

Parameter

Sym

Value

Unit

The PD25025F is a high-voltage, gold-metalized,

laterally diffused metal oxide semiconductor

(LDMOS) RF power transistor suitable for

Thermal Resistance,

Junction to Case:

R JC

2.1

°C/W

2.3GHz - 2.5GHz Class AB wireless base station

amplifier applications.

This device is manufactured on an advanced LDMOS

technology, offering state-of-the-art performance,

reliability, and thermal resistance. Packaged in an

industry-standard CuW package capable of deliver

ing a minimum output power of 25 W, it is ideally

Table 2. Absolute Maximum Ratings*

Parameter

Drain-source Voltage

Gate-source Voltage

Drain Current—Continuous

Sym Value Unit

65 Vdc

VGS –0.5, +15 Vdc

VDSS

suited for today's RF power amplifier applications.

4.25

Adc

Total Dissipation at TC = 25 °C: PD

120.7

Derate Above 25 °C:

—

0.69

200

W/°C

°C

Operating Junction Tempera-

ture

Storage Temperature Range

TSTG –65, +150 °C

* Stresses in excess of the absolute maximum ratings can cause

permanent damage to the device. These are absolute stress rat-

ings only. Functional operation of the device is not implied at

these or any other conditions in excess of those given in the

operational sections of the data sheet. Exposure to absolute

maximum ratings for extended periods can adversely affect

device reliability.

(flanged)

PD25025F

Figure 1. Available Packages

Features

Table 3. ESD Rating*

•

Application Specific Performance, 2.5 GHz

Minimum (V)

Class

HBM

500

•

Typical 2-Tone Performance

Average Load Power – 12.5 W

η_D– 30%

CDM

1500

Power Gain – 12.5 dB

IMD3: -30dBc @ -100kHz/ +100KHz

* Although electrostatic discharge (ESD) protection circuitry has

been designed into this device, proper precautions must be

taken to avoid exposure to ESD and electrical overstress (EOS)

during all handling, assembly, and test operations. Agere

employs a human-body model (HBM), a machine model (MM),

and a charged-device model (CDM) qualification requirement in

order to determine ESD-susceptibility limits and protection

design evaluation. ESD voltage thresholds are dependent on the

circuit parameters used in each of the models, as defined by

JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and

JESD22-C101A (CDM) standards.

•

Typical CW Performance

Average Load Power – 25 W

η_D– 40%

Power Gain – 12.0 dB

Caution: MOS devices are susceptible to damage from elec-

trostatic charge. Reasonable precautions in han-

dling and packaging MOS devices should be

observed.

12 3 4

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