Datasheet > PD10M441H

PD10M441H

更新时间： 2024-02-21 05:58:17

品牌	Logo	应用领域
NIEC		/
页数	文件大小	规格书
3页	69K
描述
MOSFET MODULE DUAL 85A 450V/500V

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中文翻译

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PD10M441H 数据手册

MOSFET MODULE Dual 85A 450V/500V

PD10M441H / PD10M440H

OUTLINE DRAWING

Dimension(mm)

FEATURES

* Dual MOS FETs Cascaded Circuit

* Prevented Body Diodes of MOSFETs by

SBDs, and Ultra Fast Recovery Diodes

Connected in Parallel

108.0

Circuit

* 300KHz High Speed Switching Possible

TYPICAL APPLICATIONS

* Power Supply for the Communications and

the Induction Heating

Approximate Weight : 220g

MAXMUM RATINGS

Ratings

Drain-Source Voltage (V_GS=0V)

Gate - Source Voltage

Symbol

V_DSS

V_GSS

PD10M441H

450

PD10M440H

Unit

500

+/ - 20

85 (Tc=25°C)

60 (Tc=25°C)

170 Tc=25°C)

730 Tc=25°C)

-40 to +150

-40 to +125

2000

Duty=50%

D.C.

Continuous Drain Current

I_D

Pulsed Drain Current

Total Power Dissipation

Operating Junction Temperature Range

Storage Temperature Range

Isolation Voltage Terminals to Base AC, 1 min.)

I_DM

P_D

°C

T_stg

V_ISO

Module Base to Heatsink

Bus Bar to Main Terminals

3.0

2.0

Mounting Torque

F_TOR

N•m

ELECTRICAL CHARACTERISTICS (@Tc=25°C unless otherwise noted)

Characteristic

Symbol

Test Condition

V_DS=V_DSS,V_GS=0V

T=125°C, V_DS=V_DSS,V_GS=0V

Min.

2.0

Typ.

3.1

3.5

Max.

1.0

4.0

1.0

3.9

Unit

Zero Gate Voltage Drain Current

I_DSS

Gate-Source Threshold Voltage

Gate-Source Leakage Current

Static Drain-Source On-Resistance

Drain-Source On-Voltage

Forward Transconductance

Input Capacitance

V_GS(th)V_DS=V_GS, I_D=1mA

I_GSS

r_DS(on)

µA

m-ohm

V_GS=+/- 20V,V_DS=0V

V_GS=10V, I_D=40A

V_DS(on)V_GS=10V, I_D=40A

V_DS=15V, I_D=40A

2.2

0.45

ies

Output Capacitance

C_oss

C_rss

V_DS=25V,V_GS=0V,f=1MHz

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

t_d(on)

t_r

t_d(off)

V_DD= 1/2V_DSS

I_D=40A

V_GS= -5V, +10V

R_G= 7ohm

140

110

300

FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C)

Characteristic

Continuous Source Current

Pulsed Source Current

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery

Symbol

I_S

I_SM

V_SD

t_rr

Q_r

Test Condition

Min.

Typ.

Max.

170

2.0

Unit

µC

D.C.

I_S=85A

100

0.15

I_S=85A, -dis/dt=100A/µs

THERMAL CHARACTERISTICS

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

0.171

1.2

Unit

MOS FET

Diode

Thermal Resistance, Junction to Case

Thermal Resistance, Case to Heatsink

th(j-c)

°C/W

th(c-f)

Mounting surface flat, smooth, and greased

0.1

12 3

中文翻译

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