Datasheet > PD-1153-100

PD-1153-100

更新时间： 2024-09-25 06:00:03

品牌	Logo	应用领域
OPTOWAY		光电二极管光电二极管
页数	文件大小	规格书
4页	84K
描述
InGaAs PIN PHOTODIODES PIN Photodiode with Mini-Size TO Package

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数据手册

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PD-1153-100 数据手册

Optoway

PD-115X-XXX

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InGaAs PIN PHOTODIODES

PD-1150-XXX

PIN Photodiode with Mini-Size TO Package

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FEATURES

High Responsivity for Dual windows at 1310 nm and 1550 nm

Low Dark Current

Quick Pulse Response

Hermetically Sealed 2-Pin Metal Case

2.4 mm Mini-Size Package with Flat Window Cap: PD-1150-XXX

2.4 mm Mini-Size Package with Dome Lens Cap: PD-1153-XXX

2.4 mm Mini-Size Package with Ball Lens Cap: PD-1155-XXX

DESCRIPTION

PD-115X-XXX series InGaAs Photodiode are suited to receive the light at the wavelength range from 1100

nm to 1620 nm.

PD-1150-075 / PD-1153-075/PD-1155-075

ELECTRICAL AND OPTICAL CHARACTERISTICS (T_C=25ºC)

Symbol Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Active Area

μm

Detection Range

Responsivity

1100

0.85

0.90

1310

1620

V_R=5V, λ=1300nm

V_R=5V, λ=1550nm

V_R=5V

A/W

I_dark

Dark Current

Capacitance

Rise/Fall Time

Bandwidth

0.2

0.6

1.0

0.3

V_R=5V, f=1MHz

V_R=5V, 10~90%

V_R=5V

T_r/T

GHz

PD-1150-100 /PD-1153-100/ PD-1155-100

ELECTRICAL AND OPTICAL CHARACTERISTICS (T_C=25ºC)

Symbol Parameter

Test Conditions

Min.

Typ.

100

Max.

Unit

Active Area

μm

Detection Range

Responsivity

1100

0.85

0.90

1310

1620

V_R=5V, λ=1300nm

V_R=5V, λ=1550nm

V_R=5V

A/W

I_dark

Dark Current

Capacitance

Rise/Fall Time

Bandwidth

0.3

1.2

1.0

1.5

0.5

V_R=5V, f=1MHz

V_R=5V, 10~90%

V_R=5V

T_r/T

GHz

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OPTOWAY TECHNOLOGY INC. No.38, Kuang Fu S. Road, Hu Kou, Hsin Chu Industrial Park, Hsin Chu, Taiwan 303

Tel: 886-3-5979798

Fax: 886-3-5979737

E-mail: sales@optoway.com.tw

http: // www.optoway.com.tw 1/12/2010 V4.0

12 3 4

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PD-1153-150	OPTOWAY	获取价格	InGaAs PIN PHOTODIODES PIN Photodiode with Mini-Size TO Package
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