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P6SMBJ9.0A-T3 PDF预览

P6SMBJ9.0A-T3

更新时间: 2024-01-11 12:05:12
品牌 Logo 应用领域
WTE 瞬态抑制器二极管光电二极管局域网
页数 文件大小 规格书
6页 79K
描述
600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

P6SMBJ9.0A-T3 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:DO-214AA包装说明:R-PDSO-C2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.14最大击穿电压:11.1 V
最小击穿电压:10 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:600 W元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
最大功率耗散:5 W最大重复峰值反向电压:9 V
表面贴装:YES技术:AVALANCHE
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

P6SMBJ9.0A-T3 数据手册

 浏览型号P6SMBJ9.0A-T3的Datasheet PDF文件第1页浏览型号P6SMBJ9.0A-T3的Datasheet PDF文件第3页浏览型号P6SMBJ9.0A-T3的Datasheet PDF文件第4页浏览型号P6SMBJ9.0A-T3的Datasheet PDF文件第5页浏览型号P6SMBJ9.0A-T3的Datasheet PDF文件第6页 
100  
75  
10,000  
1000  
Measured at  
zero bias  
Uni-directional  
50  
Bi-directional  
100  
25  
0
Tj = 25°C  
f = 1.0 MHz  
Vsig = 50 mV p-p  
10 X 1000 Waveform  
as defined by REA  
10  
1
10  
100  
1000  
0
25  
50  
75 100 125 150 175 200  
TA, AMBIENT TEMPERATURE (°C)  
Fig. 1 Pulse Derating Curve  
VRWM, REVERSE STANDOFF VOLTAGE (V)  
Fig. 2 Typical Junction Capacitance  
100  
Tj = 25°C  
Non Repetitive  
Pulse Waveform  
Shown in Fig. 4  
10  
1.0  
0.1  
0.1  
1.0  
10  
100  
1000  
10000  
tp PULSE WIDTH (ms)  
Fig. 3 Pulse Rating Curve  
tr = 10µs  
Peak Value Ipp  
100  
50  
0
Half Value Ipp/2  
tp  
10 X 1000 Waveform  
as defined by R.E.A.  
3
0
1
2
t, TIME (ms)  
Fig. 4 Pulse Waveform  
P6SMBJ SERIES  
2 of 6  
© 2006 Won-Top Electronics  

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