5秒后页面跳转
P6KE56CA-TP-HF PDF预览

P6KE56CA-TP-HF

更新时间: 2024-01-05 19:33:30
品牌 Logo 应用领域
美微科 - MCC 二极管IOT局域网
页数 文件大小 规格书
4页 112K
描述
Trans Voltage Suppressor Diode, 47.8V V(RWM), Bidirectional,

P6KE56CA-TP-HF 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.59
Is Samacsys:N击穿电压标称值:56 V
最大钳位电压:80.5 V二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609代码:e3极性:UNIDIRECTIONAL
最大重复峰值反向电压:45.4 V子类别:Transient Suppressors
表面贴装:NO端子面层:Matte Tin (Sn)
Base Number Matches:1

P6KE56CA-TP-HF 数据手册

 浏览型号P6KE56CA-TP-HF的Datasheet PDF文件第1页浏览型号P6KE56CA-TP-HF的Datasheet PDF文件第3页浏览型号P6KE56CA-TP-HF的Datasheet PDF文件第4页 
P6KE6.8 thru P6KE440A  
M C C  
Figure 2 - Pulse Waveform  
tr  
Figure 1  
10  
Test wave  
form  
parameters:  
t
r
= 10 msec  
100  
Peak Value IPP  
PPP - KW  
Half Wave IPP/2  
1.0  
0.1  
% IPP  
10 x 1000 Wave as  
defined by R.E.A.  
50  
.1mse  
c
1msec  
10msec  
100msec  
1msec  
tP  
0
Peak Pulse Power (P ) – versus – Pulse Time (tP)  
1
2
3
PP  
msec  
Peak Pulse Current (% IPP) - Versus - Time (t)  
Figure 3 - Typical Capacitance  
10000  
Figure 4 - Derating Curve  
100  
Measured at  
zero bias  
1000  
% PPP  
50  
pf  
100  
10  
Measured at  
standoff voltage  
300  
0
100  
Temperature °C  
Peak Pulse Power (% PPP) - Versus - Temperature °C  
200  
0
10  
100  
1000  
VBR  
Typical Capacitance (pf) – versus – Breakdown voltage  
(V  
)
www.mccsemi.com  

与P6KE56CA-TP-HF相关器件

型号 品牌 描述 获取价格 数据表
P6KE56CATR ETC TVS DIODE 47.8V 77V DO15

获取价格

P6KE56CATRE3 MICROSEMI Trans Voltage Suppressor Diode, 600W, 47.8V V(RWM), Bidirectional, 1 Element, Silicon, ROH

获取价格

P6KE56CAU12 RECTRON Trans Voltage Suppressor Diode, 600W, Bidirectional, 1 Element, Silicon, DO-15

获取价格

P6KE56CAU13 RECTRON Trans Voltage Suppressor Diode, 600W, Bidirectional, 1 Element, Silicon, DO-15

获取价格

P6KE56C-B LITTELFUSE TVS DIODE 47.8V 80.85V DO204AC

获取价格

P6KE56C-E3 VISHAY Trans Voltage Suppressor Diode, 600W, 45.4V V(RWM), Bidirectional, 1 Element, Silicon, DO-

获取价格