Datasheet > P2206BV

P2206BV

更新时间： 2024-09-29 17:15:31

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
4页	246K
描述
SOP-8

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中文翻译

获取价格

数据手册

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P2206BV 数据手册

N-Channel Logic Level Enhancement Mode

Field Effect Transistor

P2206BV

NIKO-SEM

SOP-8

Halogen-free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

60V

R_DS(ON)

I_D

22.5mΩ

G : GATE

D : DRAIN

S : SOURCE

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

LIMITS

UNITS

Gate-Source Voltage

V_GS

±20

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current

I_D

5.3

Pulsed Drain Current¹

Avalanche Current

Avalanche Energy

I_DM

I_AS

L = 0.1mH

T_A= 25 °C

T_A= 70 °C

E_AS

Power Dissipation

P_D

1.3

Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

°C / W

Junction-to-Ambient²

R_θJA

¹Pulse width limited by maximum junction temperature.

²The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air

environment with T_A=25°C.

ELECTRICAL CHARACTERISTICS (T_J= 25 °C, Unless Otherwise Noted)

LIMITS

UNIT

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX

STATIC

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

V_(BR)DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250A

V_DS= V_GS, I_D= 250A

V_DS= 0V, V_GS= ±20V

V_DS= 48V, V_GS= 0V

1.3

1.8

2.3

±100 nA

Zero Gate Voltage Drain Current

I_DSS

A

V_DS= 40V, V_GS= 0V, T_J= 55 °C

REV 1.0

I-22-4

12 3 4

中文翻译

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