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P0404FC12C PDF预览

P0404FC12C

更新时间: 2024-01-24 17:53:22
品牌 Logo 应用领域
PROTEC 瞬态抑制器二极管局域网
页数 文件大小 规格书
6页 76K
描述
PFLIP CHIP ARRAY

P0404FC12C 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:FLIP-CHIP
包装说明:S-XBGA-B4针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.66
最小击穿电压:13.3 V配置:COMMON CATHODE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:S-XBGA-B4JESD-609代码:e1
最大非重复峰值反向功率耗散:250 W元件数量:4
端子数量:4封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:GRID ARRAY
峰值回流温度(摄氏度):270极性:BIDIRECTIONAL
认证状态:Not Qualified最大重复峰值反向电压:12 V
表面贴装:YES技术:AVALANCHE
端子面层:Tin/Silver/Copper (Sn96.0Ag3.5Cu0.5)端子形式:BALL
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

P0404FC12C 数据手册

 浏览型号P0404FC12C的Datasheet PDF文件第1页浏览型号P0404FC12C的Datasheet PDF文件第2页浏览型号P0404FC12C的Datasheet PDF文件第4页浏览型号P0404FC12C的Datasheet PDF文件第5页浏览型号P0404FC12C的Datasheet PDF文件第6页 
P0404FC3.3C*  
thru  
P0404FC36C*  
GRAPHS  
FIGURE 3  
POWER DERATING CURVE  
100  
80  
Peak Pulse Power  
8/20µs  
60  
40  
20  
0
Average Power  
0
25  
50  
75  
100  
125 150  
TA - Ambient Temperature - °C  
FIGURE 4  
OVERSHOOT & CLAMPING VOLTAGE FOR P0404FC05C  
35  
25  
15  
5
-5  
ESD Test Pulse - 25 kilovolt, 1/30ns (waveshape)  
FIGURE 5  
TYPICAL CLAMPING VOLTAGE VS PEAK PULSE CURRENT FOR P0404FC05C  
14  
12  
10  
8
6
4
2
0
0
5
10  
15  
20  
IPP - Peak Pulse Current - Amps  
05154.R6 2/07  
3
www.protekdevices.com  
*U.S. Patent No. Des. “D456,367S”  

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