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OPA620SG

更新时间： 2024-01-17 01:51:21
品牌 Logo 应用领域
BB 运算放大器放大器电路
页数 文件大小 规格书
15页 311K
描述
Wideband Precision OPERATIONAL AMPLIFIER

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OPA620SG 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：CERAMIC, DIP-8Reach Compliance Code：unknown
风险等级：5.81Is Samacsys：N
放大器类型：OPERATIONAL AMPLIFIER架构：VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB)：40 µA25C 时的最大偏置电流 (IIB)：30 µA
最小共模抑制比：65 dB标称共模抑制比：75 dB
频率补偿：YES最大输入失调电压：1000 µV
JESD-30 代码：R-CDIP-T8JESD-609代码：e0
低-偏置：NO低-失调：NO
微功率：NO负供电电压上限：-7 V
标称负供电电压 (Vsup)：-5 V功能数量：1
端子数量：8最高工作温度：125 °C
最低工作温度：-55 °C封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装代码：DIP封装等效代码：DIP8,.3
封装形状：RECTANGULAR封装形式：IN-LINE
峰值回流温度（摄氏度）：NOT SPECIFIED功率：NO
电源：+-5 V可编程功率：NO
认证状态：Not Qualified最小摆率：175 V/us
标称压摆率：250 V/us子类别：Operational Amplifier
最大压摆率：25 mA供电电压上限：7 V
标称供电电压 (Vsup)：5 V表面贴装：NO
技术：BIPOLAR温度等级：MILITARY
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子节距：2.54 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED标称均一增益带宽：200000 kHz
最小电压增益：316宽带：YES
Base Number Matches：1

OPA620SG 数据手册

 浏览型号OPA620SG的Datasheet PDF文件第1页浏览型号OPA620SG的Datasheet PDF文件第2页浏览型号OPA620SG的Datasheet PDF文件第4页浏览型号OPA620SG的Datasheet PDF文件第5页浏览型号OPA620SG的Datasheet PDF文件第6页浏览型号OPA620SG的Datasheet PDF文件第7页 
SPECIFICATIONS (CONT)  
ELECTRICAL (FULL TEMPERATURE RANGE SPECIFICATIONS)  
At VCC = ±5VDC, RL = 100Ω, and TA = TMIN to TMAX, unless otherwise noted.  
OPA620KP, KU  
TYP  
OPA620SG  
TYP  
PARAMETER  
CONDITIONS  
MIN  
MAX  
MIN  
MAX  
UNITS  
TEMPERATURE RANGE  
Specification: KP, KU  
SG  
Ambient Temperature  
–40  
+85  
✻
–55  
✻
+125  
°C  
°C  
OFFSET VOLTAGE(1)  
Average Drift  
Supply Rejection  
Full Temp.  
0°C to +70°C ±VCC = 4.5V to 5.5V  
Full Temp., ±VCC = 4.5 to 5.5V  
±8  
60  
55  
✻
✻
✻
µV/°C  
dB  
dB  
45  
40  
✻
✻
BIAS CURRENT  
Input Bias Current  
Full Temp., VCM = 0VDC  
Full Temp., VCM = 0VDC  
15  
40  
5
✻
✻
✻
✻
µA  
µA  
OFFSET CURRENT  
Input Offset Current  
0.2  
INPUT VOLTAGE RANGE  
Common-Mode Input Range  
Common-Mode Rejection  
±2.5  
60  
±3.0  
75  
✻
✻
✻
✻
V
dB  
VIN = ±2.5VDC, VO = 0VDC  
OPEN LOOP GAIN, DC  
Open-Loop Voltage Gain  
RL = 100Ω  
RL = 50Ω  
46  
44  
60  
58  
✻
✻
✻
✻
dB  
dB  
RATED OUTPUT  
Voltage Output  
0°C to +70°C, RL = 100Ω  
–40°C to +85°C, RL = 100Ω  
0°C to +70°C, RL = 50Ω  
–40°C to +85°C, RL = 50Ω  
±3.0  
±2.75  
±2.5  
±3.5  
±3.25  
±3.0  
✻
✻
✻
✻
✻
✻
✻
✻
V
V
V
V
±2.25  
±2.7  
POWER SUPPLY  
Current, Quiescent  
IO = 0mA  
21  
25  
✻
✻
mA  
✻ Same specifications as for KP, KU.  
NOTES: (1) Offset Voltage specifications are also guaranteed with units fully warmed up. (2) Parameter is guaranteed by characterization. (3) dBc = dB referred  
to carrier-input signal.  
PIN CONFIGURATION  
Top View  
DIP/SO-8  
No Internal Connection  
Inverting Input  
1
2
3
4
8
7
6
5
No Internal Connection  
Positive Supply (+VCC  
Output  
)
Non-Inverting Input  
Negative Supply (–VCC  
)
No Internal Connection  
ORDERING INFORMATION  
PACKAGE INFORMATION  
PACKAGE DRAWING  
NUMBER(1)  
(
)
(
)
OPA620  
PRODUCT  
PACKAGE  
Basic Model Number  
Performance Grade Code  
K = –40°C to +85°C  
S = –55°C to +125°C  
Package Code  
OPA620KP  
OPA620KU  
OPA620SG  
8-Pin Plastic DIP  
SO-8 Surface Mount  
8-Pin Ceramic DIP  
006  
182  
157  
NOTE: (1) For detailed drawing and dimension table, please see end of data  
sheet, or Appendix C of Burr-Brown IC Data Book.  
G = 8-pin Ceramic DIP  
P = 8-pin Plastic DIP  
U = SO-8 Surface Mount  
ELECTROSTATIC  
ABSOLUTE MAXIMUM RATINGS  
DISCHARGE SENSITIVITY  
Supply ............................................................................................. ±7VDC  
Internal Power Dissipation(1) ....................... See Applications Information  
Differential Input Voltage ............................................................ Total VCC  
Input Voltage Range .................................... See Applications Information  
Storage Temperature Range: SG ................................. –65°C to +150°C  
KP, KU .......................... –40°C to +125°C  
This integrated circuit can be damaged by ESD. Burr-Brown  
recommends that all integrated circuits be handled with  
appropriate precautions. Failure to observe proper handling and  
installation procedures can cause damage.  
Lead Temperature (soldering, 10s) .............................................. +300°C  
(soldering, SO-8, 3s) ...................................... +260°C  
Output Short Circuit to Ground (+25°C) ............... Continuous to Ground  
Junction Temperature (TJ ) ............................................................ +175°C  
ESD damage can range from subtle performance degradation to  
complete device failure. Precision integrated circuits may be more  
susceptible to damage because very small parametric changes  
could cause the device not to meet its published specifications.  
NOTE: (1) Packages must be derated based on specified θ JA. Maximum TJ  
must be observed.  
®
3
OPA620  
1234567...15

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