NPN Silicon Phototransistor
OP600 Series
Electrical Specifications
Absolute Maximum Raꢀngs (TA = 25° C unless otherwise noted)
Collector-Emiꢁer Voltage
25 V
5 V
Emiꢁer-Collector Voltage
Storage Temperature Range
-65° C to +150° C
-65° C to +125° C
260° C(1)(2)
Operaꢀng Temperature Range
Soldering Temperature (5 seconds with soldering iron)
Power Dissipaꢀon
50 mW(3)
Conꢀnuous Collector Current
50 mA
Electrical Characterisꢀcs (TA = 25° C unless otherwise noted)
SYMBOL
PARAMETER
MIN TYP
MAX UNITS
TEST CONDITIONS
On-State Collector Current
OP600A
1.2
0.6
0.3
-
-
-
1.8
1.8
1.8
VCE = 5 V, EE = 2.5 mW/cm2(5)
VCE = 5 V, EE = 20 mW/cm2(5)
OP600B
OP600C
(4)
IC(ON)
mA
OP643SL
OP644SL
4.0
7.0
-
-
8.0
22.0
ICEO
Collector-Dark Current
-
25
5
-
-
-
100
nA
V
VCE = 10 V, EE = 0
IC = 100 μA
V(BR)CEO
V(BR)ECO
Collector-Emiꢁer Breakdown Voltage
Emiꢁer-Collector Breakdown Voltage
-
-
V
IE = 100 μA
Collector-Emiꢁer
OP600 (A, B, C)(2)(7)
OP643-644 (SL)(2)(7)
(4)
VCE(SAT)
-
-
0.4
V
IC = 0.15 mA, EE = 2.5 mW/cm2(5)
IC = 0.4 mA, EE = 20 mW/cm2(5)
VCC = 5 V, IC = 0.80 mA,
RL = 1 kΩ, See Test Circuit
tr
tf
Rise Time
Fall Time
-
-
15
15
-
-
µs
µs
VCC = 5 V, IC = 0.80 mA,
RL = 1 kΩ, See Test Circuit
Notes:
(1) Refer to Applicaꢀon Bulleꢀng 202, which discusses proper techniques for soldering pill-type devices to PCBoards.
(2) No clean or low solids. RMA flux is recommended. Duraꢀon can be extended to 10 seconds maximum when flow soldering.
(3) Derate linearly 0.5 mW/° C above 25° C.
(4) Juncꢀon temperature maintained at 25° C.
(5) For OP600A, OP600B and OP600C, light source is a GaAIAs LED, peak wavelength = 890 nm, that provides irradiance of 2.5 mW/cm2. The
source irradiance is not necessarily uniform over the enꢀre lens area of the unit being tested.
(6) For OP643SL and OP644SL, light source is an unfiltered tungsten bulb operaꢀng at CT = 2870 K or equivalent infrared source.
General Note
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TT Electronics reserves the right to make changes in product specificaꢀon without
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considered accurate at ꢀme of going to print.
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Rev D 5/2022 Page 2
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