Transistor
2SB0970 (2SB970)
Silicon PNP epitaxial planer type
For low-voltage output amplification
Unit: mm
+0.10
ñ0.05
0.40
3
+0.10
-0.06
0.16
Features
■
■
Low collector to emitter saturation voltage VCE(sat)
.
■
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
1
2
(0.95) (0.95)
1.9±0.1
+0.20
2.90
-0.05
Absolute Maximum Ratings (Ta=25˚C)
■
10°
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
–15
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
–10
V
–7
V
–1
A
1:Base
2:Emitter
3:Collector
EIAJ:SC–59
Mini3-G1 Package
IC
– 0.5
200
A
Collector power dissipation
Junction temperature
Storage temperature
PC
mW
˚C
˚C
Marking symbol : 1R
Tj
150
Tstg
–55 ~ +150
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
Conditions
min
typ
max
Unit
nA
V
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
VCB = –10V, IE = 0
–100
VCBO
VCEO
VEBO
IC = –10µA, IE = 0
IC = –1mA, IB = 0
IE = –10µA, IC = 0
–15
–10
–7
V
V
*1
hFE1
hFE2
V
CE = –2V, IC = –0.5A*2
130
60
350
Forward current transfer ratio
VCE = –2V, IC = –1A*2
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
IC = –0.4A, IB = –8mA
– 0.16
– 0.8
130
– 0.3
–1.2
V
V
IC = –0.4A, IB = –8mA
Transition frequency
fT
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
MHz
Collector output capacitance
Cob
22
pF
*2 Pulse measurement
*1
h
Rank classification
FE1
Rank
hFE1
R
S
130 ~ 220
1RR
180 ~ 350
1RS
Marking Symbol
Note.) The Part number in the Parenthesis shows conventional
part number.
214