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NZT7053_NL

更新时间: 2024-02-11 00:15:01
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 光电二极管晶体管
页数 文件大小 规格书
8页 305K
描述
Small Signal Bipolar Transistor, 1.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon

NZT7053_NL 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.54
外壳连接:COLLECTOR最大集电极电流 (IC):1.5 A
集电极-发射极最大电压:100 V配置:DARLINGTON
最小直流电流增益 (hFE):1000JESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
Base Number Matches:1

NZT7053_NL 数据手册

 浏览型号NZT7053_NL的Datasheet PDF文件第2页浏览型号NZT7053_NL的Datasheet PDF文件第3页浏览型号NZT7053_NL的Datasheet PDF文件第4页浏览型号NZT7053_NL的Datasheet PDF文件第5页浏览型号NZT7053_NL的Datasheet PDF文件第6页浏览型号NZT7053_NL的Datasheet PDF文件第7页 
Discr ete P OWER & Sign a l  
Tech n ologies  
2N7052  
2N7053  
NZT7053  
C
E
C
TO-92  
C
B
B
TO-226  
C
E
SOT-223  
B
E
NPN Darlington Transistor  
This device is designed for applications requiring extremely high  
gain at collector currents to 1.0 A and high breakdown voltage.  
Sourced from Process 06.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
100  
100  
V
V
V
A
Collector-Base Voltage  
Emitter-Base Voltage  
12  
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
1.5  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
2N7052  
2N7053  
*NZT7053  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
625  
5.0  
83.3  
1,000  
8.0  
125  
1,000  
8.0  
mW  
mW/°C  
°C/W  
RθJC  
RθJA  
Thermal Resistance, Junction to Ambient  
200  
50  
125  
°C/W  
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.  
ã 1997 Fairchild Semiconductor Corporation  

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