Datasheet > NX7002BKXB

NX7002BKXB

更新时间： 2023-09-03 20:32:28

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
17页	737K
描述
60 V, dual N-channel Trench MOSFETProduction

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NX7002BKXB 数据手册

NX7002BKXB

60 V, dual N-channel Trench MOSFET

30 June 2015

Product data sheet

1. General description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small

DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET technology.

2. Features and benefits

Logic-level compatible

Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm

Trench MOSFET technology

•

ElectroStatic Discharge (ESD) protection > 2 kV HBM

3. Applications

Relay driver

•

High-speed line driver

Low-side loadswitch

Switching circuits

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

-20

V_GS= 10 V; T_sp= 25 °C

V_GS= 10 V; T_amb= 25 °C

330

260

[1]

Static characteristics (per transistor)

R_DSon

drain-source on-state

resistance

V_GS= 10 V; I_D= 200 mA; T_j= 25 °C

2.2

2.8

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad

for drain 1 cm².

12 3 4 5 6 7...17

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