Datasheet > NX7002BKXB

NX7002BKXB

更新时间： 2023-09-03 20:32:28

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
17页	737K
描述
60 V, dual N-channel Trench MOSFETProduction

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NX7002BKXB 数据手册

Nexperia

NX7002BKXB

60 V, dual N-channel Trench MOSFET

8. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per transistor

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

-20

V_GS= 10 V; T_sp= 25 °C

V_GS= 10 V; T_amb= 25 °C

V_GS= 10 V; T_amb= 100 °C

T_amb= 25 °C; single pulse; t_p≤ 10 µs

T_amb= 25 °C

330

260

170

0.8

285

407

[1]

I_DM

P_tot

peak drain current

total power dissipation

[2]

[1]

T_sp= 25 °C

4032 mW

Source-drain diode

I_S

source current

T_amb= 25 °C

[1]

0.2

Per device

T_j

junction temperature

ambient temperature

storage temperature

-55

-65

150

°C

T_amb

T_stg

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad

for drain 1 cm².

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

NX7002BKXB

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Product data sheet

30 June 2015

3 / 17

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