Datasheet > NTHL067N65S3H

NTHL067N65S3H

更新时间： 2023-09-03 20:32:06

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
11页	336K
描述
Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 40 A, 67 mΩ, TO-247

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NTHL067N65S3H 数据手册

NTHL067N65S3H

TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

1000

100

7.0 V

250 ms Pulse Test

6.0 V

5.5 V

= 25°C

= 20 V

100

10 V

5.0 V

4.5 V

T = 25°C

= 4.0 V

T = −55°C

T = 150°C

, DRAIN−TO−SOURCE VOLTAGE (V)

, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics

= 25°C

Figure 2. Transfer Characteristics

1000

100

0.15

0.10

= 0 V

250 ms Pulse Test

= 10 V

= 20 V

0.05

T = 150°C

T = 25°C

T = −55°C

0.1

0.2

, BODY DIODE FORWARD VOLTAGE (V)

0.4

0.6

0.8

1.0

1.2

I , DRAIN CURRENT (A)

Figure 3. On−Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current and Temperature

Drain Current and Gate Voltage

= C + C (C = shorted)

gs gd ds

= 0 V

f = 250 KHz

iss

= 20 A

= 130 V

= C + C

oss

rss

= C

iss

= 400 V

oss

rss

−1

100

200

300

400

500

600

, DRAIN−TO−SOURCE VOLTAGE (V)

Q , TOTAL GATE CHARGE (nC)

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

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1 2 3 456 7 8...11

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