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NTD78N03 PDF预览

NTD78N03

更新时间： 2024-10-01 03:08:11
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 83K
描述
Power MOSFET 25 V, 78 A, Single N−Channel, DPAK

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NTD78N03 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：CASE 369AA-01, DPAK-3针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
风险等级：5.14雪崩能效等级（Eas）：722.5 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：25 V最大漏极电流 (ID)：11.4 A
最大漏源导通电阻：0.006 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PSSO-G2JESD-609代码：e0
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：235
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：210 A
认证状态：Not Qualified表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

NTD78N03 数据手册

 浏览型号NTD78N03的Datasheet PDF文件第2页浏览型号NTD78N03的Datasheet PDF文件第3页浏览型号NTD78N03的Datasheet PDF文件第4页浏览型号NTD78N03的Datasheet PDF文件第5页浏览型号NTD78N03的Datasheet PDF文件第6页浏览型号NTD78N03的Datasheet PDF文件第7页 
NTD78N03  
Power MOSFET  
25 V, 78 A, Single N−Channel, DPAK  
Features  
• Low R  
DS(on)  
• Optimized Gate Charge  
• Pb−Free Packages are Available  
http://onsemi.com  
Applications  
V
R
TYP  
I MAX  
D
(BR)DSS  
DS(on)  
• Desktop VCORE  
• DC−DC Converters  
• Low Side Switch  
4.6 @ 10 V  
6.5 @ 4.5 V  
25 V  
78 A  
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
Symbol  
Value  
25  
Unit  
V
N−Channel  
V
DSS  
G
V
GS  
"20  
14.8  
11.5  
2.3  
V
Continuous Drain  
Current (Note 1)  
I
D
A
T = 25°C  
S
A
T = 85°C  
A
4
4
Power Dissipation  
(Note 1)  
T = 25°C  
A
P
W
A
D
D
D
4
Continuous Drain  
Current (Note 2)  
I
D
T = 25°C  
A
11.4  
8.8  
2
1
T = 85°C  
A
Steady  
State  
1
2
3
1
2
3
3
Power Dissipation  
(Note 2)  
T = 25°C  
A
P
I
1.4  
W
A
CASE 369AC  
3 IPAK  
(Straight Lead)  
CASE 369C  
DPAK  
(Bend Lead) (Straight Lead)  
CASE 369D  
DPAK  
Continuous Drain  
T
C
T
C
T
C
= 25°C  
= 85°C  
= 25°C  
78  
56  
64  
D
Current (R  
)
q
JC  
STYLE 2  
STYLE 2  
Power Dissipation  
(R  
P
W
)
q
JC  
MARKING DIAGRAMS  
& PIN ASSIGNMENTS  
Pulsed Drain Current  
t = 10 ms  
I
88  
32  
A
A
p
DM  
4
Current Limited by Package  
Drain to Source dV/dt  
T = 25°C  
A
I
DmaxPkg  
Drain  
dV/dt  
2.0  
V/ns  
°C  
4
Operating Junction and Storage Temperature  
T , T  
−55 to  
175  
J
stg  
Drain  
Source Current (Body Diode)  
I
S
78  
A
Single Pulse Drain−to−Source Avalanche  
E
AS  
722.5  
mJ  
Energy (V = 24 V, V = 10 V,  
DD  
GS  
L = 5.0 mH, I (pk) = 17 A, R = 25 W)  
L
G
1
Gate  
3
3
2
Source  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
Source  
1
Gate  
2
Drain  
Drain  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Y
WW  
= Year  
= Work Week  
78N03 = Device Code  
1. Surface−mounted on FR4 board using 1 in sq pad size  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
(Cu area = 1.127 in sq [1 oz] including traces).  
2. Surface−mounted on FR4 board using the minimum recommended pad size  
(Cu area = TBD in sq).  
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
February, 2005 − Rev. 0  
NTD78N03/D  
 
12345678

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NTD78N03 替代型号

型号 品牌 替代类型 描述 数据表
NTD78N03T4 ONSEMI

完全替代

 Power MOSFET 25 V, 78 A, Single N−Channel,
NTD78N03G ONSEMI

完全替代

 Power MOSFET 25 V, 78 A, Single N−Channel,
NTD78N03T4G ONSEMI

类似代替

 Power MOSFET 25 V, 78 A, Single N−Channel,

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