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NS8JT PDF预览

NS8JT

更新时间: 2024-09-24 03:45:59
品牌 Logo 应用领域
EIC 整流二极管局域网
页数 文件大小 规格书
2页 52K
描述
Glass Passivated General Purpose

NS8JT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PSFM-T2
Reach Compliance Code:compliant风险等级:5.44
Is Samacsys:N其他特性:HIGH RELIABILITY
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.1 V
JEDEC-95代码:TO-220ACJESD-30 代码:R-PSFM-T2
最大非重复峰值正向电流:125 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:600 V
最大反向电流:10 µA表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

NS8JT 数据手册

 浏览型号NS8JT的Datasheet PDF文件第2页 
Glass Passivated General Purpose  
NS8AT - NS8MT  
TO-220AB  
PRV : 50 - 1000 Volts  
Io : 8.0 Ampere  
0.154(3.91)DIA.  
0.148(3.74)  
0.185(4.70)  
0.175(4.44)  
0.415(10.54)MAX.  
0.055(1.39)  
0.045(1.14)  
0.113(2.87)  
0.103(2.62)  
FEATURES :  
* High current capability  
0.145(3.68)  
0.135(3.43)  
0.603(15.32)  
0.573(14.55)  
* High surge current capability  
* High reliability  
0.635(16.13)  
0.625(15.87)  
0.350(8.89)  
0.330(8.39)  
1
2 3  
* Low reverse current  
* Low forward voltage drop  
0.160(4.06)  
0.140(3.56)  
PIN 1  
0.560(14.22)  
0.530(13.46)  
PIN 2  
* Glass passivated chip junction  
* Pb / RoHS Free  
CASE  
PIN 3  
0.037(0.94)  
0.022(0.56)  
0.014(0.36)  
0.027(0.68)  
0.205(520)  
0.195(4.95)  
MECHANICAL DATA :  
* Case : Epoxy, Molded  
0.105(2.67)  
0.095(2.41)  
* Lead Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
Dimensions in inches and ( millimeters )  
* Weight : 1.9 grams (Approximately)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
NS8 NS8 NS8 NS8 NS8 NS8 NS8  
RATING  
SYMBOL  
UNIT  
AT  
BT  
DT  
GT  
JT  
KT  
800 1000  
560 700  
800 1000  
MT  
Maximum Repetitive Peak Reverse Voltage  
Maximum Working Reverse Voltage  
Maximum DC Blocking Voltage  
VRRM  
VRWM  
VDC  
50  
100  
200  
400  
600  
V
V
V
A
35  
50  
70  
140  
200  
280  
400  
8.0  
420  
600  
100  
Maximum Average Forward Current, Tc = 150°C  
Maximum Peak Forward Surge Current  
8.3ms single half sine-wave superimposed on  
rated load (JEDEC Method)  
IF(AV)  
IFSM  
125  
A
Maximum Instantaneous Forward Voltage at IF = 8 A  
VF  
IR  
1.1  
10  
V
mA  
Maximum Reverse Current at  
Rated DC Blocking Voltage  
Tc = 25 °C  
IR(H)  
RθJC  
TJ  
100  
3.0  
Tc = 150 °C  
mA  
Maximum Thermal Resistance, Junction to Case  
Junction Temperature Range  
°C/W  
°C  
- 55 to + 150  
- 55 to + 150  
Storage Temperature Range  
TSTG  
°C  
Page 1 of 2  
Rev. 02 : March 25, 2005  

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