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NS41024L20E-SMD PDF预览

NS41024L20E-SMD

更新时间: 2024-01-04 06:53:12
品牌 Logo 应用领域
德州仪器 - TI 静态存储器内存集成电路
页数 文件大小 规格书
16页 47K
描述
NS41024L20E-SMD

NS41024L20E-SMD 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:QCCN, LCC32,.45X.55Reach Compliance Code:unknown
风险等级:5.92最长访问时间:20 ns
I/O 类型:COMMONJESD-30 代码:R-XQCC-N32
JESD-609代码:e0内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:128KX8输出特性:3-STATE
封装主体材料:CERAMIC封装代码:QCCN
封装等效代码:LCC32,.45X.55封装形状:RECTANGULAR
封装形式:CHIP CARRIER并行/串行:PARALLEL
电源:5 V认证状态:Not Qualified
筛选级别:38535Q/M;38534H;883B最大待机电流:0.001 A
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.14 mA标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子面层:Tin/Lead (Sn/Pb)
端子形式:NO LEAD端子节距:1.27 mm
端子位置:QUADBase Number Matches:1

NS41024L20E-SMD 数据手册

 浏览型号NS41024L20E-SMD的Datasheet PDF文件第1页浏览型号NS41024L20E-SMD的Datasheet PDF文件第2页浏览型号NS41024L20E-SMD的Datasheet PDF文件第4页浏览型号NS41024L20E-SMD的Datasheet PDF文件第5页浏览型号NS41024L20E-SMD的Datasheet PDF文件第6页浏览型号NS41024L20E-SMD的Datasheet PDF文件第7页 
MICROCIRCUIT DATA SHEET  
MDNS41024L20-X REV 0B0  
(Absolute Maximum Ratings)  
(Note 1, 2)  
Supply Voltage Range (VCC)  
-0.5Vdc to +7.0Vdc  
DC Input Voltage Range (VIN)  
(Note 3)  
-0.5Vdc to Vcc +0.5Vdc  
DC Output Voltage Range (VOUT)  
(Note 3)  
-0.5Vdc to Vcc +0.5Vdc  
-65 C to +150 C  
1.0W  
Storage Temperature Range  
Maximum Power Dissipation (PD)  
Lead Temperature  
(Soldering, 10 seconds)  
+260 C  
Thermal Resistance, Junction to Case (ThetaJC)  
Case M  
See MIL-STD-1835  
-0.5Vdc to Vcc +0.5Vdc  
Output Voltage Applied in High Z State  
Maximum Junction Temperature (TJ)  
(Note 4)  
+150 C  
Note 1: Stresses above the absolute maximum rating may cause permanent damage to the device.  
Extended operation at the maximum levels may degrade performance and affect  
reliability.  
Note 2: All voltages referenced to VSS (VSS = ground) unless otherwise specified.  
Note 3: Negative undershoots to a minimum of -3.0V are allowed with a maximum of 20nS pulse  
width.  
Note 4: Maximum junction temperature may be increased to +175 C during burn-in and  
steady-state life.  
Recommended Operating Conditions  
Supply Voltage Range (VCC)  
Supply Voltage Range (VSS)  
High Level Input Voltage Range (VIH)  
Low Level Input Voltage Range (VIL)  
Case Operating Temperature Range (TC)  
3

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