Datasheet > NR8360JP-BC

NR8360JP-BC

更新时间： 2024-01-26 00:13:25

品牌	Logo	应用领域
CEL		光纤光电二极管 PC 局域网
页数	文件大小	规格书
2页	85K
描述
30 um InGaAs APD IN DIP PACKAGE FOR OTDR APPLICATION

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中文翻译

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数据手册

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NR8360JP-BC 数据手册

PRELIMINARY DATA SHEET

NEC's ø30 µm

InGaAs APD IN DIP PACKAGE

NR8360JP-BC

FOR OTDR APPLICATION

FEATURES

DESCRIPTION

NEC's NR8360JP-BC is an InGaAs avalanche photodiode

module with single mode fiber. A thermoelectric cooler is

integrated enabling the temperature control of the APD chip. It

is designed for long-reach optical communications and optical

test instruments, especially OTDR.

• HIGH QUANTUM EFFICIENCY:

η = 85 % @ λ = 1310 nm

η = 80 % @ λ = 1550 nm

• SMALL DARK CURRENT: ID = 2 nA

• HIGH-SPEED RESPONSE: fC = 1.2 GHz @ M = 20

• INTERNAL THERMOELECTRIC COOLER

• HERMETICALLY SEALED

14-PIN DUAL IN-LINE PACKAGE

ELECTRO-OPTICAL CHARACTERISTICS (TAPD = 25°C, TC = -20 to +55°C, unless otherwise specified)

PART NUMBER

NR8360JP-BC

SYMBOLS

PARAMETERS AND CONDITIONS

Reverse Breakdown Voltage, ID = 100 µA

UNITS

MIN

TYP

MAX

VBR

δ¹

100

Temperature Coefficient of Reverse Breakdown Voltage

%/°C

0.2

Dark Current, VR = VBR X 0.9

VR = VBR X 0.9, TC = 55°C, IC = 0.8 A

IDM

Multiplied Dark Current, M = 2 to 10

0.2

1.0

2.0

1.7

Terminal Capacitance, VR = VBR X 0.9, f = 1 MHz

Cut-off Frequency, M = 10

M = 20

GHz

1.0

1.2

Quantum Efficiency, λ = 1310 nm

λ = 1550 nm

Sensitivity,

λ = 1310 nm

λ = 1550 nm

A/W

0.73

0.89

1.00

Multiplication Factor, λ = 1310 nm, IOP = 1.0 µA,

VR = V (@ ID = 1 µA)

Excess Noise Factor², λ = 1310 nm, 1550 nm, IOP = 1.0 µA,

0.7

M = 10, f = 35 MHz, B = 1 MHz

Thermistor Resistance

B Constant

kΩ

9.5

10.0

3450

0.6

10.5

3550

0.8

3350

Cooler Current, ∆T = 45°C

Cooler Voltage, IC = 0.8 A

Cooling Capacity, IC = 0.8 A

1.1

1.5

∆T

°C

Notes:

VBR (25°C + ∆T °C) – V(BR (25°C)

∆T °C • VBR (25°C)

1. δ =

2. F = M^X

3. ∆T = |TC —TAPD|

California Eastern Laboratories

中文翻译

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