Datasheet > NP89N055NUK-S18-AY

NP89N055NUK-S18-AY

更新时间： 2022-11-28 01:52:20

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
8页	104K
描述
MOS FIELD EFFECT TRANSISTOR

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NP89N055NUK-S18-AY 数据手册

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NP89N055MUK, NP89N055NUK

Package Drawing (Unit: mm)

TO-220 (MP-25K) (Mass: 1.9 g TYP.)

3.8 0.2

4.45 0.2

1.3 0.2

10.0 0.2

1.27 0.2

0.8 0.1

0.5 0.2

2.5 0.2

2.54 TYP.

1. Gate

2. Drain

3. Source

4. Fin (Drain)

TO-262 (MP-25SK) (Mass: 1.8 g TYP.)

4.45 0.2

10.0 0.2

1.3 0.2

1.27 0.2

0.8 0.1

0.5 0.2

2.5 0.2

2.54 TYP.

1. Gate

2. Drain

3. Source

4. Fin (Drain)

Equivalent Circuit

Drain

Body

Diode

Gate

Source

Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and

ultimately degrade the device operation. Steps must be taken to stop generation of static electricity

as much as possible, and quickly dissipate it once, when it has occurred.

R07DS0600EJ0100 Rev.1.00

Jan 11, 2012

Page 6 of 6

1...3 4 567 8

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