生命周期: | Transferred | 包装说明: | LEAD FREE, MP-25ZK, TO-263, 3 PIN |
Reach Compliance Code: | unknown | 风险等级: | 5.65 |
雪崩能效等级(Eas): | 484 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 40 V |
最大漏极电流 (ID): | 84 A | 最大漏源导通电阻: | 0.0052 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-263AB |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 336 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NP84N04KHE-E2-AY | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET | |
NP84N04KHE-E2-AY | RENESAS |
获取价格 |
84A, 40V, 0.0052ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, LEAD FREE, MP-25ZK, TO-263, 3 | |
NP84N04MHE | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET | |
NP84N04MHE-S18-AY | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET | |
NP84N04NHE | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET | |
NP84N04NHE-S18-AY | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET | |
NP84N055CHE | NEC |
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MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET | |
NP84N055CHE-AZ | RENESAS |
获取价格 |
Power Field-Effect Transistor, 84A I(D), 55V, 0.0073ohm, 1-Element, N-Channel, Silicon, Me | |
NP84N055CHE-S12-AZ | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET | |
NP84N055CLE | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |