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NP15P04SLG-E1-AY PDF预览

NP15P04SLG-E1-AY

更新时间: 2024-02-16 00:23:13
品牌 Logo 应用领域
日电电子 - NEC 开关脉冲晶体管
页数 文件大小 规格书
7页 193K
描述
Power Field-Effect Transistor, 15A I(D), 40V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, MP-3ZK, TO-252, 3 PIN

NP15P04SLG-E1-AY 技术参数

生命周期:Transferred零件包装代码:TO-252AA
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.32
雪崩能效等级(Eas):25 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:40 V
最大漏极电流 (ID):15 A最大漏源导通电阻:0.06 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:P-CHANNEL最大脉冲漏极电流 (IDM):45 A
认证状态:Not Qualified表面贴装:YES
端子面层:PURE TIN端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

NP15P04SLG-E1-AY 数据手册

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NP15P04SLG  
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M8E 02. 11-1  

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