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NM93C06LEN

更新时间： 2025-09-01 22:44:47

品牌	Logo	应用领域
美国国家半导体 - NSC		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
12页	175K
描述
256-/1024-/2048-/4096-Bit Serial EEPROM with Extended Voltage (2.7V to 5.5V) (MICROWIRE Bus Interface)

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数据手册

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NM93C06LEN 数据手册

November 1996

NM93C06L/C46L/C56L/C66L

256-/1024-/2048-/4096-Bit Serial EEPROM

with Extended Voltage (2.7V to 5.5V)

(MICROWIRE^TMBus Interface)

General Description

The

Features

2.7V to 5.5V operation in all modes

NM93C06L/C46L/C56L/C66L

devices

are

256/1024/2048/4096 bits, respectively, of non-volatile

electrically erasable memory divided into 16/64/128/256 x

16-bit registers (addresses). The NM93CxxL Family func-

tions in an extended voltage operating range, requires only

a single power supply and is fabricated using National Semi-

conductor’s floating gate CMOS technology for high reliabili-

ty, high endurance and low power consumption. These de-

vices are available in both SO and TSSOP packages for

small space considerations.

Typical active current of 100 mA; Typical standby

current of 1 mA

No erase required before write

Reliable CMOS floating gate technology

MICROWIRE compatible serial I/O

Self-timed programming cycle

Device status during programming mode

40 years data retention

Endurance: 10 data changes

The EEPROM Interfacing is MICROWIRE compatible for

simple interface to standard microcontrollers and micro-

processors. There are 7 instructions that control these de-

vices: Read, Erase/Write Enable, Erase, Erase All, Write,

Write All, and Erase/Write Disable. The ready/busy status

is available on the DO pin during programming.

Packages available: 8-pin SO, 8-pin DIP, and 8-pin

TSSOP

Block Diagram

TL/D/10045–1

TRI-STATEÉ is a registered trademark of National Semiconductor Corporation.

MICROWIRE^TMis a trademark of National Semiconductor Corporation.

1996 National Semiconductor Corporation

TL/D/10045

RRD-B30M126/Printed in U. S. A.

http://www.national.com

12 3 4 5 6 7...12

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