Datasheet > NIS5112

NIS5112

更新时间： 2024-02-06 17:24:59

品牌	Logo	应用领域
安森美 - ONSEMI		电子
页数	文件大小	规格书
9页	96K
描述
Electronic Fuse

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NIS5112 数据手册

NIS5112

Electronic Fuse

The NIS5112 is an integrated switch utilizing a high side N−channel

FET driven by an internal charge pump. This switch features a

SENSEFETt which allows for current sensing using inexpensive

chip resistors instead of expensive, low impedance current shunts.

It is designed to operate in 12 V systems and includes a robust

thermal protection circuit.

http://onsemi.com

MARKING

DIAGRAM

Features

• Integrated Power Device

• Power Device Thermally Protected

• No External Current Shunt Required

• Enable/Timer Pin

• Adjustable Slew Rate for Output Voltage

• 9 V to 18 V Input Range

• 30 mW Typical

112x

AYWWG

SOIC−8 NB

CASE 751

= L for thermal latch off

= H for thermal auto−retry

= Assembly Location

= Year

• Internal Charge Pump

• These are Pb−Free Devices

= Work Week

= Pb−Free Package

Typical Applications

(Note: Microdot may be in either location)

• Hard Drives

ORDERING INFORMATION

†

Device

Package

Shipping

NIS5112D1R2G

NIS5112D2R2G

SOIC−8

Latch Off

(Pb−Free)

2500

Tape & Reel

SOIC−8

Auto−Retry

(Pb−Free)

2500 /

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Charge

Pump

Voltage

Regulator

Current

Limit

Current Limit

Overvoltage

Clamp

Source

5, 6, 7

Thermal

Latch

Voltage

Slew Rate

Enable/

Timer

Enable/Timer

GND

dV/dt

Figure 1. Block Diagram

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

November, 2006 − Rev. 4

NIS5112/D

12 3 4 5 6 7...9

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NIS5132MN1T1G	ONSEMI	获取价格	1-CHANNEL POWER SUPPLY SUPPORT CKT, DSO10, 3 X 3 MM, 0.50 MM PITCH, LEAD FREE, DFN-10
NIS5132MN1TXG	ONSEMI	获取价格	+12 Volt Electronic Fuse
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