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NIS5112D2R2G PDF预览

NIS5112D2R2G

更新时间: 2024-01-21 03:10:28
品牌 Logo 应用领域
安森美 - ONSEMI 电子
页数 文件大小 规格书
9页 96K
描述
Electronic Fuse

NIS5112D2R2G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SOIC包装说明:SOP, SOP8,.25
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
Factory Lead Time:1 week风险等级:1.48
可调阈值:YES模拟集成电路 - 其他类型:POWER SUPPLY SUPPORT CIRCUIT
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.9 mm湿度敏感等级:3
信道数量:1功能数量:1
端子数量:8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified座面最大高度:1.75 mm
标称供电电压 (Vsup):12 V表面贴装:YES
温度等级:OTHER端子面层:Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL宽度:3.9 mm
Base Number Matches:1

NIS5112D2R2G 数据手册

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NIS5112  
Electronic Fuse  
The NIS5112 is an integrated switch utilizing a high side N−channel  
FET driven by an internal charge pump. This switch features a  
SENSEFETt which allows for current sensing using inexpensive  
chip resistors instead of expensive, low impedance current shunts.  
It is designed to operate in 12 V systems and includes a robust  
thermal protection circuit.  
http://onsemi.com  
MARKING  
DIAGRAM  
Features  
Integrated Power Device  
Power Device Thermally Protected  
No External Current Shunt Required  
Enable/Timer Pin  
Adjustable Slew Rate for Output Voltage  
9 V to 18 V Input Range  
30 mW Typical  
8
112x  
AYWWG  
G
SOIC−8 NB  
CASE 751  
8
1
1
x
= L for thermal latch off  
= H for thermal auto−retry  
= Assembly Location  
= Year  
Internal Charge Pump  
These are Pb−Free Devices  
A
Y
WW  
G
= Work Week  
= Pb−Free Package  
Typical Applications  
(Note: Microdot may be in either location)  
Hard Drives  
ORDERING INFORMATION  
Device  
Package  
Shipping  
NIS5112D1R2G  
NIS5112D2R2G  
SOIC−8  
Latch Off  
(Pb−Free)  
2500  
Tape & Reel  
8
SOIC−8  
Auto−Retry  
(Pb−Free)  
2500 /  
Tape & Reel  
V
CC  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Charge  
Pump  
Voltage  
Regulator  
Current  
Limit  
Current Limit  
4
Overvoltage  
Clamp  
Source  
5, 6, 7  
Thermal  
Latch  
Voltage  
Slew Rate  
Enable/  
Timer  
Enable/Timer  
3
GND  
1
dV/dt  
2
Figure 1. Block Diagram  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
November, 2006 − Rev. 4  
NIS5112/D  

NIS5112D2R2G 替代型号

型号 品牌 替代类型 描述 数据表
NIS5112D1R2G ONSEMI

完全替代

Electronic Fuse

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