5秒后页面跳转
捷配首页

Datasheet > NIS2161MTTAG
NIS2161MTTAG PDF预览

NIS2161MTTAG

更新时间： 2023-06-19 14:31:47
品牌 Logo 应用领域
安森美 - ONSEMI 电信光电二极管电信集成电路
页数 文件大小 规格书
8页 142K
描述
Low Capacitance ESD Protection for Automotive High Speed Data Lines

阅读下载

中文翻译

获取价格

NIS2161MTTAG 技术参数

是否无铅： 不含铅生命周期：Preview
包装说明：WDFN-10Reach Compliance Code：compliant
风险等级：5.76JESD-30 代码：R-PDSO-N10
JESD-609代码：e3长度：3.5 mm
湿度敏感等级：1功能数量：1
端子数量：10封装主体材料：PLASTIC/EPOXY
封装代码：VSON封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, VERY THIN PROFILE峰值回流温度（摄氏度）：NOT SPECIFIED
座面最大高度：0.8 mm表面贴装：YES
电信集成电路类型：SURGE PROTECTION CIRCUIT端子面层：Tin (Sn)
端子形式：NO LEAD端子节距：0.675 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：2 mmBase Number Matches：1

NIS2161MTTAG 数据手册

 浏览型号NIS2161MTTAG的Datasheet PDF文件第2页浏览型号NIS2161MTTAG的Datasheet PDF文件第3页浏览型号NIS2161MTTAG的Datasheet PDF文件第4页浏览型号NIS2161MTTAG的Datasheet PDF文件第5页浏览型号NIS2161MTTAG的Datasheet PDF文件第6页浏览型号NIS2161MTTAG的Datasheet PDF文件第7页 
NIV2161, NIS2161  
ESD Protection with  
Automotive Short-to-  
Battery/Ground Protection  
Low Capacitance ESD Protection w/ short−  
to−battery and short−to−ground  
Protection for Automotive High Speed  
Data Lines  
www.onsemi.com  
MARKING  
DIAGRAM  
The NIS/NIV2161 is designed to protect high speed data lines  
from ESD as well as short to vehicle battery situations. The ultra−low  
capacitance and low ESD clamping voltage make this device an ideal  
solution for protecting voltage sensitive high speed data lines while  
WDFN10  
CASE 511CA  
V2 MG  
G
the low R  
FET limits distortion on the signal lines. The  
V2 = Specific Device Code  
DS(on)  
M
= Date Code  
flow−through style package allows for easy PCB layout and matched  
trace lengths necessary to maintain consistent impedance between  
high speed differential lines such as USB and LVDS protocols.  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
Features  
PIN CONFIGURATION  
AND SCHEMATICS  
• Low Capacitance (0.40 pF Typical, I/O to GND)  
• Protection for the Following Standards:  
IEC 61000−4−2 (Level 4) & ISO 10605  
• Integrated MOSFETs for Short−to−Battery and Short−to−Ground  
Protection  
10  
9
8
7
6
• NIV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
1
2
3
4
5
(Top View)  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
Pin 1 and Pin 10 – Source 1  
Pin 3 – 5V Pin 3 – 5V  
Typical Applications  
• Automotive High Speed Signal Pairs  
• USB 2.0/3.0  
Pin 2 – D+ Host  
Pin 4 – D−Host  
Pin 9 – D+  
Pin 7 – D−  
• LVDS  
• APIX 2/3  
Pin 3 – 5V  
Pin 3 – 5V  
Pin 8 – GND  
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Pin 5 and Pin6 – Source 2  
Rating  
Symbol  
Value  
−55 to +150  
−55 to +150  
30  
Unit  
°C  
°C  
V
Operating Junction Temperature Range  
Storage Temperature Range  
Drain−to−Source Voltage  
T
J(max)  
TSTG  
ORDERING INFORMATION  
V
DSS  
†
Device  
Package  
Shipping  
Gate−to−Source Voltage  
V
10  
V
GS  
NIV2161MTTAG  
WDFN10  
(Pb−Free)  
3000 / Tape & Reel  
Lead Temperature Soldering  
T
SLD  
260  
°C  
NIS2161MTTAG  
WDFN10  
(Pb−Free)  
3000 / Tape & Reel  
IEC 61000−4−2 Contact (ESD)  
IEC 61000−4−2 Air (ESD)  
ESD  
ESD  
8
15  
kV  
kV  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
©
Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
October, 2016 − Rev. 0  
NIV2161/D  
12345678

中文翻译

下载PDF

与NIS2161MTTAG相关器件

型号 品牌 获取价格 描述 数据表
NIS22NDTRF NICHICON

获取价格

 		IND,ALUMINA,22NH,5% +TOL,5% -TOL,0603 CASE
NIS27NDTR NICHICON

获取价格

 		IND,ALUMINA,27NH,5% +TOL,5% -TOL,0603 CASE
NIS27NDTRF NICHICON

获取价格

 		IND,ALUMINA,27NH,5% +TOL,5% -TOL,0603 CASE
NIS27NJTR NICHICON

获取价格

 		General Purpose Inductor, 0.027uH, 5%, 1 Element, Alumina-Core, SMD, 0603
NIS27NJTRF NICHICON

获取价格

 		IND,ALUMINA,27NH,5% +TOL,5% -TOL,0603 CASE
NIS2N7DTR NICHICON

获取价格

 		General Purpose Inductor, 0.0027uH, 1 Element, Alumina-Core, SMD
NIS2N7DTRF NICHICON

获取价格

 		IND,ALUMINA,2.7NH,5% +TOL,5% -TOL,0603 CASE
NIS2N7JTR NICHICON

获取价格

 		IND,ALUMINA,2.7NH,5% +TOL,5% -TOL,0603 CASE
NIS2N7JTRF NICHICON

获取价格

 		IND,ALUMINA,2.7NH,5% +TOL,5% -TOL,0603 CASE
NIS3001 ONSEMI

获取价格

 		Integrated Driver and MOSFET Power Chip for Synchronous Buck Controllers

与NIS2161MTTAG相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证