Datasheet > NIS1161MTTAG

NIS1161MTTAG

更新时间： 2023-06-19 14:31:47

品牌	Logo	应用领域
安森美 - ONSEMI		电池
页数	文件大小	规格书
7页	206K
描述
具有用于汽车高速数据线的电池短路阻断功能的低电容 ESD 保护

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中文翻译

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数据手册

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NIS1161MTTAG 数据手册

NIV1161, NIS1161

ESD Protection with

Automotive Short-to-

Battery Blocking

Low Capacitance ESD Protection with

short−to−battery blocking for Automotive

High Speed Data Lines

The NIS/NIV1161 is designed to protect high speed data lines from

ESD as well as short to vehicle battery situations. The ultra−low

capacitance and low ESD clamping voltage make this device an ideal

solution for protecting voltage sensitive high speed data lines while

www.onsemi.com

MARKING

DIAGRAM

WDFN6

CASE 511CB

V6 M

the low R

FET limits distortion on the signal lines. The

DS(on)

V6 = Specific Device Code

= Date Code

flow−through style package allows for easy PCB layout and matched

trace lengths necessary to maintain consistent impedance between

high speed differential lines such as USB and LVDS protocols.

Features

PIN CONFIGURATION

AND SCHEMATICS

• Low Capacitance (0.65 pF Typical, I/O to GND)

• Protection for the Following Standards:

IEC 61000−4−2 (Level 4) & ISO 10605

• Integrated MOSFETs for Short−to−Battery Blocking

• NIV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

(Top View)

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Pin 2 − 5 V

Compliant

Typical Applications

• Automotive High Speed Signal Pairs

• USB 2.0/3.0

Pin 1

Pin 6

D+

D+ HOST

Pin 3

D− HOST

Pin 4

D−

• LVDS

• APIX 2/3

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Pin 5 − GND

Pin 2 − 5 V

Rating

Symbol

Value

−55 to +150

Unit

°C

Operating Junction Temperature Range

Storage Temperature Range

Drain−to−Source Voltage

J(max)

TSTG

DSS

ORDERING INFORMATION

Gate−to−Source Voltage

†

Device

Package

Shipping

Lead Temperature Soldering

260

°C

SLD

NIV1161MTTAG

WDFN−6

(Pb−Free)

3000 / Tape & Reel

IEC 61000−4−2 Contact (ESD)

IEC 61000−4−2 Air (ESD)

ESD

NIS1161MTTAG

WDFN−6

(Pb−Free)

3000 / Tape & Reel

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2016

Publication Order Number:

March, 2016 − Rev. 1

NIV1161/D

12 3 4 5 6 7

中文翻译

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与NIS1161MTTAG相关器件

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NIS12NDTRF	NICHICON	获取价格	IND,ALUMINA,12NH,5% +TOL,5% -TOL,0603 CASE
NIS12NJTR	NICHICON	获取价格	General Purpose Inductor, 0.012uH, 5%, 1 Element, Alumina-Core, SMD
NIS12NJTRF	NICHICON	获取价格	IND,ALUMINA,12NH,5% +TOL,5% -TOL,0603 CASE
NIS15NDTR	NICHICON	获取价格	IND,ALUMINA,15NH,5% +TOL,5% -TOL,0603 CASE
NIS15NDTRF	NICHICON	获取价格	IND,ALUMINA,15NH,5% +TOL,5% -TOL,0603 CASE
NIS15NJTR	NICHICON	获取价格	General Purpose Inductor, 0.015uH, 5%, 1 Element, Alumina-Core, SMD
NIS15NJTRF	NICHICON	获取价格	IND,ALUMINA,15NH,5% +TOL,5% -TOL,0603 CASE
NIS18NDTR	NICHICON	获取价格	IND,ALUMINA,18NH,5% +TOL,5% -TOL,0603 CASE
NIS18NDTRF	NICHICON	获取价格	IND,ALUMINA,18NH,5% +TOL,5% -TOL,0603 CASE
NIS18NJTR	NICHICON	获取价格	General Purpose Inductor, 0.018uH, 5%, 1 Element, Alumina-Core, SMD

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