Preliminary
Preliminary
NGA-386 DC-5.0 GHz 4.0V GaAs HBT
Absolute Maximum Ratings
Operation of this device above any one of these
Parameter
Supply Current
Value
90
Unit
mA
V
parameters may cause permanent damage.
Device Voltage
6.0
Bias Conditions should also satisfy the following
expression: IDVD (max) < (TJ - TOP)/Rth,j-l
Operating Temperature
Maximum Input Power
Storage Temperature Range
Operating Junction Temperature
-40 to +85
+10
ºC
dBm
ºC
-40 to +150
+150
ºC
Key parameters, at typical operating frequencies:
Typical
25ºC
Test Condition
Parameter
(ID = 35mA, unless otherwise noted)
Unit
500 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Isolation
21.3
25.1
14.6
26.8
23.6
dB
dBm Tone spacing = 1 MHz, Pout per tone = 0dBm
dBm
dB
dB
850 MHz
Gain
20.9
25.8
14.5
24.8
23.4
dB
Output IP3
Output P1dB
Input Return Loss
Isolation
dBm Tone spacing = 1 MHz, Pout per tone = 0dBm
dBm
dB
dB
1950 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Isolation
18.9
27.0
15.0
22.0
22.2
dB
dBm Tone spacing = 1 MHz, Pout per tone = 0dBm
dBm
dB
dB
2400 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Isolation
18.0
27.0
15.6
21.0
21.6
dB
dBm Tone spacing = 1 MHz, Pout per tone = 0dBm
dBm
dB
dB
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
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EDS-101103 Rev C