Datasheet > NESG220033-A

NESG220033-A

更新时间： 2024-01-02 00:37:07

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管
页数	文件大小	规格书
8页	89K
描述
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

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技术参数
数据手册

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NESG220033-A 技术参数

生命周期：	Transferred	包装说明：	LEAD FREE, MINIMOLD PACKAGE-3
Reach Compliance Code：	unknown	风险等级：	5.72
最大集电极电流 (IC)：	0.2 A	基于收集器的最大容量：	0.9 pF
配置：	SINGLE	最高频带：	ULTRA HIGH FREQUENCY BAND
JESD-30 代码：	R-PDSO-G3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	12500 MHz
Base Number Matches：	1

NESG220033-A 数据手册

NESG220033

NOISE FIGURE, ASSOCIATED GAIN

vs. COLLECTOR CURRENT

OUTPUT 3RD ORDER INTERCEPT POINT

vs. COLLECTOR CURRENT

CE = 5 V,

f = 1 GHz,

f1 = 1.000 GHz,

f2 = 1.001 GHz

= ZSopt, Z = 50 Ω

Collector Current I

100

Collector Current I (mA)

100

(mA)

EACH OUTPUT POWER, IM

vs. EACH INPUT POWER

OUTPUT POWER, LINEAR GAIN,

COLLECTOR CURRENT vs. INPUT POWER

400

CE = 5 V,

C (set) = 40 mA,

f = 1 GHz

300

out (each)

out

–10

–20

–30

–40

–50

–60

–70

–80

200

100

CE = 5 V,

C (set) = 40 mA,

f1 = 1.000 GHz,

f2 = 1.001 GHz

–10

–20

–10

–20

–10

Each Input Power Pin (each) (dBm)

Input Power Pin (dBm)

Remark The graphs indicate nominal characteristics.

S-PARAMETERS

S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import

of the parameters to microwave circuit simulators without the need for keyboard inputs.

Click here to download S-parameters.

[RF and Microwave] → [Device Parameters]

URL http://www.necel.com/microwave/en/

Data Sheet PU10766EJ03V0DS

1...3 4 567 8

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