Datasheet > NE202930

NE202930

更新时间： 2024-09-24 07:16:59

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
8页	210K
描述
Silicon NPN Epitaxial High Frequency Transistor

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NE202930 数据手册

PreliminaryData Sheet

NE202930

Silicon NPN Epitaxial High Frequency Transistor

R09DS0003EJ0100

Rev.1.00

Jul 14, 2010

FEATURES

•

High transition frequency f_T= 11 GHz TYP.

Ideal for low noise and low distortion amplification

Suitable for equipments of low collector voltage (Less than 5 V)

Suitable for up to 1 GHz applications

APPLICATIONS

•

LNA (Low Noise Amplifier) or power splitter for digital-TV

OUTLINE

RENESAS Package code: 30

(Package name: 3-pin super minimold (30 PKG))

1. Emitter

2. Base

3. Collector

Note: Marking is "R7D"

ORDERING INFORMATION

Part Number

Order Number

Package

3-pin super

minimold (30 PKG)

(Pb-Free)

Marking

Supplying Form

NE202930-T1

NE202930-T1-A

R7D

•

Embossed tape 8 mm wide

Pin 3 face the perforation side of the tape

Qty 3 kpcs/reel

Remark To order evaluation samples, please contact your nearby sales office.

Part number for sample order: NE202930

ABSOLUTE MAXIMUM RATINGS (T

= +25°C)

Parameter

Symbol

V_CBO

Ratings

Unit

Collector to Base Voltage

Collector to Emitter Voltage

(Base Short)

V_CES

Collector to Emitter Voltage

(Base Open)

V_CEO

Emitter to Base Voltage

Collector Current

Total Power Dissipation ^Note

Junction Temperature

Storage Temperature

Note: Free air

V_EBO

100

150

°C

P_tot

T_j

T_stg

−65 to +150

°C

CAUTION

Observe precautions when handling because these devices are sensitive to electrostatic discharge.

R09DS0003EJ0100 Rev.1.00

Jul 14, 2010

Page 1 of 6

12 3 4 5 6 7 8

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