是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | VQCCN, | Reach Compliance Code: | compliant |
Factory Lead Time: | 4 weeks | 风险等级: | 1.35 |
Samacsys Description: | CURRENT SENSE AMP G=200 | 模拟集成电路 - 其他类型: | ANALOG CIRCUIT |
JESD-30 代码: | R-XQCC-N10 | JESD-609代码: | e4 |
长度: | 1.8 mm | 湿度敏感等级: | 1 |
功能数量: | 1 | 端子数量: | 10 |
最高工作温度: | 125 °C | 最低工作温度: | -40 °C |
封装主体材料: | UNSPECIFIED | 封装代码: | VQCCN |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER, VERY THIN PROFILE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 座面最大高度: | 0.6 mm |
最大供电电压 (Vsup): | 26 V | 最小供电电压 (Vsup): | 2.2 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | YES |
温度等级: | AUTOMOTIVE | 端子面层: | Nickel/Palladium/Gold (Ni/Pd/Au) |
端子形式: | NO LEAD | 端子节距: | 0.4 mm |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 1.4 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NCS210RSQT2G | ONSEMI |
获取价格 |
Low- or High-Side Current Sensing | |
NCS210SQT2G | ONSEMI |
获取价格 |
Current Sense Amplifier, Bidirectional, Zero-Drift, 1% Max. Gain Error, 60 µV Off | |
NCS211MUTAG | ONSEMI |
获取价格 |
Current-Shunt Monitor, Voltage Output Bi-Directional Zero-Drift | |
NCS211RMUTAG | ONSEMI |
获取价格 |
Low- or High-Side Current Sensing | |
NCS211RSQT2G | ONSEMI |
获取价格 |
Low- or High-Side Current Sensing | |
NCS211SQT2G | ONSEMI |
获取价格 |
Current Sense Amplifier, Bidirectional Zero-Drift, 1% Max. Gain Error, 60 µV Offs | |
NCS212MUTAG | ONSEMI |
获取价格 |
Current-Shunt Monitor, Voltage Output Bi-Directional Zero-Drift | |
NCS212SQT2G | ONSEMI |
获取价格 |
Current-Shunt Monitor, Voltage Output Bi-Directional Zero-Drift | |
NCS213MUTAG | ONSEMI |
获取价格 |
Current-Shunt Monitor, Voltage Output Bi-Directional Zero-Drift | |
NCS213RMUTAG | ONSEMI |
获取价格 |
Low- or High-Side Current Sensing |