5秒后页面跳转
NCS210RMUTAG PDF预览

NCS210RMUTAG

更新时间: 2024-09-26 00:54:39
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
20页 661K
描述
Low- or High-Side Current Sensing

NCS210RMUTAG 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:VQCCN,Reach Compliance Code:compliant
Factory Lead Time:4 weeks风险等级:1.35
Samacsys Description:CURRENT SENSE AMP G=200模拟集成电路 - 其他类型:ANALOG CIRCUIT
JESD-30 代码:R-XQCC-N10JESD-609代码:e4
长度:1.8 mm湿度敏感等级:1
功能数量:1端子数量:10
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:UNSPECIFIED封装代码:VQCCN
封装形状:RECTANGULAR封装形式:CHIP CARRIER, VERY THIN PROFILE
峰值回流温度(摄氏度):NOT SPECIFIED座面最大高度:0.6 mm
最大供电电压 (Vsup):26 V最小供电电压 (Vsup):2.2 V
标称供电电压 (Vsup):5 V表面贴装:YES
温度等级:AUTOMOTIVE端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:NO LEAD端子节距:0.4 mm
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:1.4 mmBase Number Matches:1

NCS210RMUTAG 数据手册

 浏览型号NCS210RMUTAG的Datasheet PDF文件第2页浏览型号NCS210RMUTAG的Datasheet PDF文件第3页浏览型号NCS210RMUTAG的Datasheet PDF文件第4页浏览型号NCS210RMUTAG的Datasheet PDF文件第5页浏览型号NCS210RMUTAG的Datasheet PDF文件第6页浏览型号NCS210RMUTAG的Datasheet PDF文件第7页 
NCS210R, NCV210R,  
NCS211R, NCV211R,  
NCS213R, NCV213R,  
NCS214R, NCV214R  
Current-Shunt Monitors,  
Voltage Output,  
www.onsemi.com  
Bidirectional Zero-Drift,  
Low- or High-Side Current  
Sensing  
1
1
The NCS210R, NCS211R, NCS213R and NCS214R are voltage  
output, current shunt monitors (also called current sense amplifiers)  
which can measure voltage across shunts at common−mode voltages  
from −0.3 V to 26 V, independent of supply voltage. The low offset of  
the zero−drift architecture enables current sensing across the shunt  
with maximum voltage drop as low as 10 mV full−scale. These  
devices can operate from a single +2.2 V to +26 V power supply,  
drawing a maximum of 80 mA of supply current, and are specified over  
the extended operating temperature range (–40°C to +125°C).  
Available in the SC70−6 and UQFN10 packages.  
UQFN10  
MU SUFFIX  
CASE 488AT  
SC70−6  
SQ SUFFIX  
CASE 419B  
MARKING DIAGRAM  
6
XXMG  
XXXMG  
G
G
1
Features  
XXX  
M
= Specific Device Code  
= Date Code  
= Pb−Free Package  
Wide Common Mode Input Range: −0.3 V to 26 V  
Supply Voltage Range: 2.2 V to 26 V  
Low Offset Voltage: 35 mV max  
Low Offset Drift: 0.5 mV/°C  
G
(Note: Microdot may be in either location)  
PIN CONNECTIONS  
Low Gain Error: 1% max  
Low Gain Error Drift: 10 ppm/°C max  
Rail−to−Rail Output Capability  
Low Current Consumption: 40 mA typ, 80 mA max  
1
REF  
OUT  
IN−  
*NC  
IN+  
1
*NC  
Vs  
NCV Prefix for Automotive and Other Applications Requiring  
GND  
Vs  
Unique Site Qualified and PPAP Capable  
IN+  
Typical Applications  
Current Sensing (High−Side/Low−Side)  
Automotive  
(Top Views)  
*NC denotes no internal connection. These pins can  
be left floating or connected to any voltage between  
Telecom  
Power Management  
Battery Charging and Discharging  
V
S
and GND.  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
page 2 of this data sheet.  
© Semiconductor Components Industries, LLC, 2018  
1
Publication Order Number:  
July, 2018 − Rev. 7  
NCS210R/D  

与NCS210RMUTAG相关器件

型号 品牌 获取价格 描述 数据表
NCS210RSQT2G ONSEMI

获取价格

Low- or High-Side Current Sensing
NCS210SQT2G ONSEMI

获取价格

Current Sense Amplifier, Bidirectional, Zero-Drift, 1% Max. Gain Error, 60 µV Off
NCS211MUTAG ONSEMI

获取价格

Current-Shunt Monitor, Voltage Output Bi-Directional Zero-Drift
NCS211RMUTAG ONSEMI

获取价格

Low- or High-Side Current Sensing
NCS211RSQT2G ONSEMI

获取价格

Low- or High-Side Current Sensing
NCS211SQT2G ONSEMI

获取价格

Current Sense Amplifier, Bidirectional Zero-Drift, 1% Max. Gain Error, 60 µV Offs
NCS212MUTAG ONSEMI

获取价格

Current-Shunt Monitor, Voltage Output Bi-Directional Zero-Drift
NCS212SQT2G ONSEMI

获取价格

Current-Shunt Monitor, Voltage Output Bi-Directional Zero-Drift
NCS213MUTAG ONSEMI

获取价格

Current-Shunt Monitor, Voltage Output Bi-Directional Zero-Drift
NCS213RMUTAG ONSEMI

获取价格

Low- or High-Side Current Sensing