Datasheet > NCP11367

NCP11367

更新时间： 2024-02-17 01:19:54

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
24页	393K
描述
High Voltage Primary Side PWM Switcher

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中文翻译

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数据手册

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NCP11367 数据手册

NCP11367ꢀ

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High Voltage Primary Side

PWM Switcher for Low

Power Offline SMPS

www.onsemi.com

Description

The NCP11367 offers a new integrated FET solution targeting

output power levels up to 12 W continuously in a universal−mains

flyback application.

Thanks to a Novel Method this new controller saves the secondary

feedback circuitry for Constant Voltage and Constant Current

regulation, achieving excellent line and load regulation without

traditional opto coupler and TL431 voltage reference.

TSSOP20

CASE 948BL

The NCP11367 operates in valley lockout quasi−resonant peak

current mode control mode at high load to provide high efficiency.

When the power on the secondary side starts to diminish, the

controller automatically adjusts the duty−cycle then at lower load the

controller enters in pulse frequency modulation at fixed peak current

with a valley switching detection. This technique allows keeping the

output regulation with tiny dummy load. Valley lockout at the first 4

valleys prevent valley jumping operation and then a valley switching

at lower load provides high efficiency.

MARKING DIAGRAM

XXXX

ALYWG

XXXX = Specific Device Code

= Assembly Location

= Wafer Lot

= Year

= Work Week

= Pb−Free Package

Features

• Integrated 650 V Power MOSFET with r

of 3.2 W Typical

ds(on)

@ 25°C

• Constant Voltage Primary−Side Regulation < 5%

• Internal Line FeedForward

(Note: Microdot may be in either location)

• Quasi−Resonant with Valley Switching Operation

• Optimized Light Load Efficiency and Stand−by Performance

• Frequency Clamp Options

PIN ASSIGNMENT

GND

COMP

20 NC

• Cycle by Cycle Peak Current Limit

• Output Voltage Under Voltage and Over Voltage Protection

(UVP or OVP)

• Secondary Diode or Winding Short−Circuit Protection

V /

ZCD

VCC

GND

• UVP Built−in Blanking Time to Support 5000 mF Capacitive

Load Capability

• Cable Drop Compensation Adjustment

• Wide Operation V_CCRange (up to 28 V)

• Low Start−up Current

• CS & Vs/ZCD Pin Short and Open Protection

• Internal Temperature Shutdown

• Internal and Fixed Frequency Jittering for Better EMI Signature

SRC

DRAIN

DRAIN 10

11 DRAIN

Typical Applications

• Low Power AC/DC Adapters for Routers and Set−Top Box

This document contains information on a product under development. ON Semiconductor

reserves the right to change or discontinue this product without notice.

ORDERING INFORMATION

See detailed ordering and shipping information on page 23 of

this data sheet.

Publication Order Number:

December, 2017 − Rev. P1

NCP11367/D

12 3 4 5 6 7...24

中文翻译

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与NCP11367相关器件

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NCP11367BBABYDBR2G	ONSEMI	获取价格	High Voltage Primary Side PWM Switcher
NCP11367BBBBYDBR2G	ONSEMI	获取价格	High Voltage Primary Side PWM Switcher
NCP11367BBDBYDBR2G	ONSEMI	获取价格	High Voltage Primary Side PWM Switcher
NCP11377	ONSEMI	获取价格	High Voltage Primary Side High Voltage Primary Side
NCP11377BAAYDBR2G	ONSEMI	获取价格	High Voltage Primary Side High Voltage Primary Side
NCP11377BABYDBR2G	ONSEMI	获取价格	High Voltage Primary Side High Voltage Primary Side
NCP114	ONSEMI	获取价格	CMOS Low Dropout Regulator
NCP114_16	ONSEMI	获取价格	300 mA CMOS Low Dropout Regulator
NCP114_17	ONSEMI	获取价格	CMOS Low Dropout Regulator
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