Datasheet > NCP11377BAAYDBR2G

NCP11377BAAYDBR2G

更新时间： 2024-02-08 08:38:11

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
30页	562K
描述
High Voltage Primary Side High Voltage Primary Side

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NCP11377

Product Preview

High Voltage Primary Side

PWM Switcher for Low

Power Offline SMPS

www.onsemi.com

The NCP11377 offers a new integrated FET solution targeting

output power levels up to 12 W continuously in a universal-mains

flyback application.

Thanks to a Novel Method this new controller saves the secondary

feedback circuitry for Constant Voltage and Constant Current

regulation, achieving excellent line and load regulation without

traditional opto coupler and TL431 voltage reference.

TSSOP20

CASE 948BL

The NCP11377 operates in valley lockout quasi-resonant peak

current mode control mode at high load to provide high efficiency.

When the power on the secondary side starts to diminish, the

controller automatically adjusts the duty-cycle then at lower load the

controller enters in pulse frequency modulation at fixed peak current

with a valley switching detection. This technique allows keeping the

output regulation with tiny dummy load. Valley lockout at the first 4

valleys prevent valley jumping operation and then a valley switching

at lower load provides high efficiency.

MARKING DIAGRAM

XXXX

ALYWG

XXXX = Specific Device Code

= Assembly Location

= Wafer Lot

Features

= Year

= Work Week

= Pb−Free Package

• Integrated 650 V Power MOSFET with r

@ 25°C

of 3.2 W Typical

ds(on)

• Constant Voltage Primary-Side Regulation < 5%

(Note: Microdot may be in either location)

• Constant Current Primary-Side Regulation < 5%

PIN ASSIGNMENT

• LFF and BO Feature on a Dedicated Pin:

♦ BO Detection

♦ LFF for CC Regulation Improvement

• Quasi-Resonant with Valley Switching Operation

BO/LFF

GND

COMP

Fault

• Optimized Light Load Efficiency and Stand-by Performance

• Maximum Frequency Clamp (No Clamp, 80, 110 and 140 kHz)

• Cycle by Cycle Peak Current Limit

V /ZCD

• Output Voltage Under Voltage and Over Voltage Protection

(UVP or OVP)

GND

• Secondary Diode or Winding Short-Circuit Protection

• Cable Drop Compensation Adjustment

SRC

• Wide Operation V Range (up to 28 V)

• Low Start-up Current

• CS & V /ZCD Pin Short and Open Protection

DRAIN

• Internal Temperature Shutdown

• Internal and Fixed Frequency Jittering for Better EMI Signature

• Dual Frozen Peak Current to Both Optimize Light Load Efficiency

(10% Load) and Stand-by Performance (No-load)

ORDERING INFORMATION

See detailed ordering and shipping information on page 29 of

this data sheet.

This document contains information on a product under development. ON Semiconductor

reserves the right to change or discontinue this product without notice.

Publication Order Number:

January, 2018 − Rev. P2

NCP11377/D

12 3 4 5 6 7...30

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与NCP11377BAAYDBR2G相关器件

型号	品牌	获取价格	描述	数据表
NCP11377BABYDBR2G	ONSEMI	获取价格	High Voltage Primary Side High Voltage Primary Side
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NCP114_16	ONSEMI	获取价格	300 mA CMOS Low Dropout Regulator
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NCP114AMX075TCG	ONSEMI	获取价格	CMOS Low Dropout Regulator
NCP114AMX080TCG	ONSEMI	获取价格	CMOS Low Dropout Regulator
NCP114AMX090TAG	ONSEMI	获取价格	LDO 稳压器，300 mA，高 PSRR
NCP114AMX090TCG	ONSEMI	获取价格	CMOS Low Dropout Regulator
NCP114AMX092TAG	ONSEMI	获取价格	LDO 稳压器，300 mA，高 PSRR
NCP114AMX100TCG	ONSEMI	获取价格	CMOS Low Dropout Regulator

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