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NAND512W4A2C

更新时间: 2024-01-06 10:21:17
品牌 Logo 应用领域
恒忆 - NUMONYX 闪存
页数 文件大小 规格书
51页 1272K
描述
512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

NAND512W4A2C 数据手册

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NAND512R3A2C NAND512R4A2C  
NAND512W3A2C NAND512W4A2C  
512 Mbit, 528 byte/264 word page,  
1.8 V/3 V, NAND Flash memories  
Features  
High density NAND Flash memories  
512 Mbit memory array  
Cost effective solutions for mass  
storage applications  
NAND interface  
x 8 or x 16 bus width  
Multiplexed Address/ Data  
TSOP48 12 x 20 mm  
Supply voltage: 1.8 V, 3.0 V  
Page size  
FBGA  
x 8 device: (512 + 16 spare) bytes  
x 16 device: (256 + 8 spare) words  
VFBGA55 8 x 10 x 1 mm  
VFBGA63 9 x 11 x 1 mm  
Block size  
x 8 device: (16 K + 512 spare) bytes  
x 16 device: (8 K + 256 spare) words  
Hardware Data Protection  
Page Read/Program  
Program/Erase locked during Power  
transitions  
Random access:  
12 µs (3 V)/15 µs (1.8 V) (max)  
Data integrity  
Sequential access:  
30 ns (3 V)/50 ns (1.8 V) (min)  
100,000 Program/Erase cycles (with  
ECC)  
Page Program time: 200 µs (typ)  
10 years Data Retention  
®
Copy Back Program mode  
Fast Block Erase: 2 ms (typ)  
Status Register  
ECOPACK packages  
Development tools  
Error Correction Code models  
Electronic signature  
Bad Blocks Management and Wear  
Leveling algorithms  
Chip Enable ‘don’t care’  
Serial Number option  
Hardware simulation models  
Table 1.  
Device summary  
Reference  
Part number  
NAND512R3A2C  
NAND512R4A2C(1)  
NAND512W3A2C  
NAND512W4A2C(1)  
NAND512-A2C  
1. x16 organization only available for MCP.  
January 2008  
Rev 2  
1/51  
www.numonyx.com  
1

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128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
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128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash