Datasheet > N0434N

N0434N

更新时间： 2022-03-29 16:52:35

品牌	Logo	应用领域
瑞萨 - RENESAS		开关
页数	文件大小	规格书
8页	216K
描述
N-CHANNEL MOSFET FOR SWITCHING

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N0434N 数据手册

N0434N

Chapter Title

Package Drawing (Unit: mm)

TO-262

4.8 MAX.

1.ꢀ 0.2

10.0 0.ꢀ

1.47 0.2

1.27 0.2

0.8 0.1

2.4 0.2

0.5 0.2

2.54

1. Gate

2. Drain

ꢀ. Source

4. Fin (Drain)

2 ꢀ

Equivalent Circuit

Drain

Body

Diode

Gate

Source

Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and

ultimately degrade the device operation. Steps must be taken to stop generation of static

electricity as much as possible, and quickly dissipate it once, when it has occurred.

R07DS0556EJ0100 Rev.1.00

Nov 07, 2011

Page 6 of 6

1...3 4 567 8

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