Datasheet > N01M083WL1AN-70I

N01M083WL1AN-70I

更新时间： 2024-01-29 05:51:57

品牌	Logo	应用领域
NANOAMP		静态存储器
页数	文件大小	规格书
9页	224K
描述
SRAM

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技术参数
数据手册

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N01M083WL1AN-70I 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.8
Base Number Matches：	1

N01M083WL1AN-70I 数据手册

NanoAmp Solutions, Inc.

Timing Test Conditions

N01M083WL1A

Item

0.1V_CCto 0.9 V_CC

Input Pulse Level

Input Rise and Fall Time

Input and Output Timing Reference Levels

Output Load

5ns

0.5 V_CC

CL = 30pF

-40 to +85 ^oC

Operating Temperature

Timing

2.3 - 3.6 V

2.7 - 3.6 V

Item

Symbol

Units

Min.

Max.

Min.

Max.

t_RC

t_AA

Read Cycle Time

100

Address Access Time

100

t_CO

t_OE

t_LZ

Chip Enable to Valid Output

Output Enable to Valid Output

Chip Enable to Low-Z output

Output Enable to Low-Z Output

Chip Disable to High-Z Output

Output Disable to High-Z Output

Output Hold from Address Change

Write Cycle Time

t_OLZ

t_HZ

t_OHZ

t_OH

t_WC

t_CW

t_AW

t_WP

t_AS

100

Chip Enable to End of Write

Address Valid to End of Write

Write Pulse Width

Address Setup Time

t_WR

t_WHZ

t_DW

t_DH

t_OW

Write Recovery Time

Write to High-Z Output

Data to Write Time Overlap

Data Hold from Write Time

End Write to Low-Z Output

Stock No. 23206-01 11/01/02

The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.

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