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N01M083WL1AN-70I PDF预览

N01M083WL1AN-70I

更新时间: 2024-02-14 06:23:29
品牌 Logo 应用领域
NANOAMP 静态存储器
页数 文件大小 规格书
9页 224K
描述
SRAM

N01M083WL1AN-70I 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.8
Base Number Matches:1

N01M083WL1AN-70I 数据手册

 浏览型号N01M083WL1AN-70I的Datasheet PDF文件第1页浏览型号N01M083WL1AN-70I的Datasheet PDF文件第2页浏览型号N01M083WL1AN-70I的Datasheet PDF文件第3页浏览型号N01M083WL1AN-70I的Datasheet PDF文件第5页浏览型号N01M083WL1AN-70I的Datasheet PDF文件第6页浏览型号N01M083WL1AN-70I的Datasheet PDF文件第7页 
NanoAmp Solutions, Inc.  
Power Savings with Page Mode Operation (WE = V )  
N01M083WL1A  
IH  
Page Address (A4 - A17)  
Word Address (A0 - A3)  
Open page  
...  
Word 16  
Word 1  
Word 2  
CE1  
CE2  
OE  
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal  
organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power  
saving feature.  
The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open  
and 8-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant  
bits and addressing the 16 words within the open page, power is reduced to the page mode value which is  
considerably lower than standard operating currents for low power SRAMs.  
Stock No. 23206-01 11/01/02  
4
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.  

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