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N01L163WN1AB2-70I PDF预览

N01L163WN1AB2-70I

更新时间: 2024-01-24 06:49:15
品牌 Logo 应用领域
NANOAMP 静态存储器内存集成电路
页数 文件大小 规格书
10页 269K
描述
Standard SRAM, 64KX16, 70ns, CMOS, PBGA48

N01L163WN1AB2-70I 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:6 X 8 MM, GREEN, BGA-48Reach Compliance Code:unknown
风险等级:5.78最长访问时间:70 ns
JESD-30 代码:R-PBGA-B48JESD-609代码:e1
长度:8 mm内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
功能数量:1端子数量:48
字数:65536 words字数代码:64000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:64KX16
封装主体材料:PLASTIC/EPOXY封装代码:LFBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, LOW PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:1.34 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.3 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:BALL
端子节距:0.75 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:40宽度:6 mm
Base Number Matches:1

N01L163WN1AB2-70I 数据手册

 浏览型号N01L163WN1AB2-70I的Datasheet PDF文件第1页浏览型号N01L163WN1AB2-70I的Datasheet PDF文件第2页浏览型号N01L163WN1AB2-70I的Datasheet PDF文件第3页浏览型号N01L163WN1AB2-70I的Datasheet PDF文件第5页浏览型号N01L163WN1AB2-70I的Datasheet PDF文件第6页浏览型号N01L163WN1AB2-70I的Datasheet PDF文件第7页 
NanoAmp Solutions, Inc.  
Power Savings with Page Mode Operation (WE = V )  
N01L163WN1A  
IH  
Page Address (A4 - A15 )  
Word Address (A0 - A3)  
CE  
Open page  
...  
Word 16  
Word 1  
Word 2  
OE  
LB, UB  
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal  
organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power  
saving feature.  
The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open  
and 16-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant  
bits and addressing the 16 words within the open page, power is reduced to the page mode value which is  
considerably lower than standard operating currents for low power SRAMs.  
(DOC# 14-02-011 REV G ECN# 01-1272)  
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.  
4

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