Datasheet > N01L1618N1AB

N01L1618N1AB

更新时间： 2024-01-21 05:38:38

品牌	Logo	应用领域
NANOAMP		静态存储器
页数	文件大小	规格书
10页	223K
描述
1Mb Ultra-Low Power Asynchronous CMOS SRAM

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技术参数
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N01L1618N1AB 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.78
Base Number Matches：	1

N01L1618N1AB 数据手册

NanoAmp Solutions, Inc.

N01L1618N1A

Absolute Maximum Ratings

Item

Symbol

V_IN,OUT

V_CC

Rating

–0.3 to V_CC+0.3

–0.3 to 3.0

500

Unit

Voltage on any pin relative to V_SS

Voltage on V_CCSupply Relative to V_SS

Power Dissipation

P_D

^oC

T_STG

Storage Temperature

–40 to 125

T_A

Operating Temperature

-40 to +85

260^oC, 10sec

T_SOLDER

Soldering Temperature and Time

1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional

operation of the device at these or any other conditions above those indicated in the operating section of this specification is not

implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Operating Characteristics (Over Specified Temperature Range)

Typ¹

Item

Symbol

Test Conditions

Min.

Max

Unit

V_CC

V_DR

V_IH

V_IL

Supply Voltage

Data Retention Voltage

Input High Voltage

1.65

1.2

0.7V_CC

1.8

2.2

Chip Disabled³

V_CC+0.3

0.3V_CC

Input Low Voltage

–0.3

V_OH

V_OL

I_LI

I_OH= 0.2mA

I_OL= -0.2mA

V_CC–0.3

Output High Voltage

Output Low Voltage

Input Leakage Current

Output Leakage Current

0.3

0.5

V_IN= 0 to V_CC

µA

I_LO

OE = V_IHor Chip Disabled

V_CC=2.2 V, V_IN=V_IHor V_IL

Chip Enabled, I_OUT= 0

Read/Write Operating Supply Current

I_CC1

I_CC2

0.7

3.0

@ 1 µs Cycle Time²

V_CC=2.2 V, V_IN=V_IHor V_IL

Chip Enabled, I_OUT= 0

Read/Write Operating Supply Current

@ 85 ns Cycle Time²

Page Mode Operating Supply Current

@ 85ns Cycle Time²(Refer to Power

Savings with Page Mode Operation

diagram)

V_CC=2.2 V, V_IN=V_IHor V_IL

Chip Enabled, I_OUT= 0,

I_CC3

µA

V_CC=2.2 V, V_IN=V_IHor V_IL

Chip Enabled, I_OUT= 0,

f = 0

Read/Write Quiescent Operating Sup-

ply Current³

I_CC4

V_IN= V_CCor 0V

Chip Disabled

Maximum Standby Current³

I_SB1

0.5

µA

t_A= 85^oC, V_CC= 2.2 V

V_CC= 1.2V, V_IN= V_CCor 0

Chip Disabled, t_A= 85^oC

Maximum Data Retention Current³

I_DR

1. Typical values are measured at Vcc=Vcc Typ., T_A=25°C and are not 100% tested.

2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive

output capacitance expected in the actual system.

3. This device assumes a standby mode if the chip is disabled (CE high). In order to achieve low standby current all inputs must be

within 0.2 volts of either VCC or VSS

(DOC# 14-02-009 REV F ECN# 01-0995)

The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.

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