RoHS
RoHS
N-HFA30PA60C
SEMICONDUCTOR
Nell High Power Products
FRED
Ultrafast Soft Recovery Diode, 2 x 15 A
FEATURES
Ultrafast recovery
Ultrasoft recovery
Very low I
Very low Q
Specified at operating conditions
RRM
rr
Designed and qualified for industrial level
TO-247AB
BENEFITS
Reduced RFI and EMI
common
cathode
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
2
Reduced parts count
DESCRIPTION
HFA30PA60C is a state of the art center tap ultrafast
1
3
recovery diode.
Employing the latest in epitaxial
Anode
Anode
2
2
1
construction and advanced processing techniques
it features a superb combination of characteristics
which result in performance which is unsurpassed by
any rectifier previously available. With basic ratings
of 600V and 15 A per leg continuous current, the
HFA30PA60C is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition
to ultrafast recovery time, the FRED product line
features extremely low values of peak recovery
Common
cathode
PRODUCT SUMMARY
current (I
) and does not exhibit any tendency to
RRM
VR
VF at 15A at 25 °C
IF(AV)
600 V
“snap-off” during the t
b portion of recovery. The FRED
features combine to offer designers a rectifier with
lower noise and significantly lower switching losses
in both the diode and the switching transistor.
These FRED advantages can help to significantly
reduce snubbing, component count and heatsink
sizes. The FRED HFA30PA60C is ideally suited for
applications in power conversion systems (such as
inverters), motor drives, and many other similar
applications where high speed, high efficiency is
needed.
1.7 V
2 x 15 A
19 ns
t
rr (typical)
TJ (maximum)
rr (typical)
dI(rec)M/dt (typical)
RRM (typical)
150 °C
Q
80 nC
160 A/µs
4.0 A
I
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Cathode to anode voltage
VR
600
15
V
per leg
Maximum continuous forward current
IF
T
= 100 ºC
c
per device
30
A
Single pulse forward current
IFSM
IFRM
150
60
Maximum repetitive forward current
T
= 25 ºC
74
c
PD
Maximum power dissipation
W
T
= 100 ºC
29
c
Operating junction and storage temperature range
TJ, TStg
- 55 to + 150
ºC
Page 1 of 6
www.nellsemi.com